Part Details for IRF531 by Harris Semiconductor
Results Overview of IRF531 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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IRF531 Information
IRF531 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF531
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 116 |
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$3.0710 / $4.9800 | Buy Now |
Part Details for IRF531
IRF531 CAD Models
IRF531 Part Data Attributes
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IRF531
Harris Semiconductor
Buy Now
Datasheet
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IRF531
Harris Semiconductor
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 79 W | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 71 ns | |
| Turn-on Time-Max (ton) | 66 ns |
Alternate Parts for IRF531
This table gives cross-reference parts and alternative options found for IRF531. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF531, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF520NPBF | Infineon Technologies AG | $0.5343 | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF531 vs IRF520NPBF |
| BUZ72 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF531 vs BUZ72 |
| IRF533 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | IRF531 vs IRF533 |
| IRF533 | Intersil Corporation | Check for Price | 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF531 vs IRF533 |
| MTP10N10 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF531 vs MTP10N10 |
IRF531 Frequently Asked Questions (FAQ)
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The IRF531 can operate from -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
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To ensure the IRF531 is fully turned on, the gate-source voltage (VGS) should be at least 10V for a logic-level input, and the input signal should have a rise time of less than 10ns to prevent oscillations.
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The recommended gate resistor value for the IRF531 is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher value can help reduce oscillations, but may increase switching time.
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Yes, the IRF531 can be used in high-frequency switching applications up to 1MHz, but the user should ensure that the gate drive is sufficient, and the layout is optimized to minimize parasitic inductance and capacitance.
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To protect the IRF531 from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect overcurrent conditions. Additionally, ensure the PCB layout is designed to minimize parasitic inductance and capacitance.