Part Details for IRF130 by Motorola Mobility LLC
Results Overview of IRF130 by Motorola Mobility LLC
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF130 Information
IRF130 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF130
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1 |
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RFQ |
Part Details for IRF130
IRF130 CAD Models
IRF130 Part Data Attributes
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IRF130
Motorola Mobility LLC
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Datasheet
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IRF130
Motorola Mobility LLC
14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 85 ns | |
| Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for IRF130
This table gives cross-reference parts and alternative options found for IRF130. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF130, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTXV2N6756 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF130 vs JANTXV2N6756 |
| IRF131 | Rochester Electronics LLC | Check for Price | 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF130 vs IRF131 |
| JANTX2N6756 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | IRF130 vs JANTX2N6756 |
| JANTXV2N6756 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | IRF130 vs JANTXV2N6756 |
| IRF130-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | IRF130 vs IRF130-JQR-B |
| IRF130 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | IRF130 vs IRF130 |
| IRF131 | Intersil Corporation | Check for Price | 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF130 vs IRF131 |
| IRF131 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF130 vs IRF131 |
| 2N6756 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | IRF130 vs 2N6756 |
| JAN2N6756 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | IRF130 vs JAN2N6756 |
IRF130 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF130 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF130 can be calculated using the formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides the thermal resistance values for the device, but the actual RθJC value may vary depending on the specific application and cooling conditions.
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The recommended gate drive voltage for the IRF130 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve the device's switching performance, but it may also increase the power consumption and EMI emissions.
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Yes, the IRF130 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The datasheet provides the device's switching characteristics, and the user should ensure that the application's switching frequency is within the device's recommended operating range.
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To protect the IRF130 from overvoltage and overcurrent conditions, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, the user should ensure that the device is operated within its recommended voltage and current ratings, and that the application's power supply is stable and reliable.