Part Details for FGA25N120ANTD by Fairchild Semiconductor Corporation
Results Overview of FGA25N120ANTD by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FGA25N120ANTD Information
FGA25N120ANTD by Fairchild Semiconductor Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FGA25N120ANTD
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for FGA25N120ANTD
FGA25N120ANTD CAD Models
FGA25N120ANTD Part Data Attributes
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FGA25N120ANTD
Fairchild Semiconductor Corporation
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Datasheet
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FGA25N120ANTD
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 180 ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 312 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 90 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 354 ns | |
| Turn-on Time-Nom (ton) | 110 ns |
FGA25N120ANTD Frequently Asked Questions (FAQ)
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The maximum junction temperature that the FGA25N120ANTD can withstand is 150°C.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal vias to dissipate heat efficiently.
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The recommended gate drive voltage for the FGA25N120ANTD is between 10V and 15V to ensure proper switching and minimize power losses.
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Yes, the FGA25N120ANTD can be used in a parallel configuration to increase the current handling capability. However, it is essential to ensure that the devices are properly matched and the gate drive signals are synchronized to prevent uneven current sharing.
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The maximum dv/dt rating for the FGA25N120ANTD is 10 kV/μs. Exceeding this rating can cause the device to fail or malfunction.