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Part Details for FDB024N04AL7 by onsemi
Results Overview of FDB024N04AL7 by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDB024N04AL7 Information
FDB024N04AL7 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB024N04AL7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDB024N04AL7
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Avnet Americas | Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel (Alt: FDB024N04AL7) RoHS: Compliant Min Qty: 291 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 3200 Partner Stock |
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$2.0235 / $2.1658 | Buy Now |
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DISTI #
FDB024N04AL7
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Avnet Silica | Trans MOSFET NCH 40V 219A 7Pin6Tab D2PAK TR (Alt: FDB024N04AL7) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 100 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | MOSFET N-CH 40V 100A TO263-7 | 1200 |
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RFQ | |
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DISTI #
FDB024N04AL7
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EBV Elektronik | Trans MOSFET NCH 40V 219A 7Pin6Tab D2PAK TR (Alt: FDB024N04AL7) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 3200 |
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RFQ |
Part Details for FDB024N04AL7
FDB024N04AL7 CAD Models
FDB024N04AL7 Part Data Attributes
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FDB024N04AL7
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB024N04AL7
onsemi
N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ, D2PAK-7 / TO-263-7, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-7 / TO-263-7 | |
| Package Description | D2PAK-7 | |
| Manufacturer Package Code | 418AY | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 864 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 214 W | |
| Pulsed Drain Current-Max (IDM) | 876 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDB024N04AL7 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) that the FDB024N04AL7 can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To ensure the FDB024N04AL7 is properly biased, follow the recommended biasing conditions outlined in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Additionally, ensure the device is operated within the recommended operating conditions, such as temperature and current limits.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using thermal vias and a copper pour on the PCB. Additionally, ensure the device is mounted on a heat sink or thermal pad to dissipate heat efficiently. Consult the datasheet and application notes for more detailed guidance on PCB layout and thermal management.
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Yes, the FDB024N04AL7 is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, ensure that the device is operated within the recommended frequency range and that the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
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To protect the FDB024N04AL7 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes, in the circuit design.