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N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
67R2009
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Newark | Mosfet Transistor, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:220Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.3V Rohs Compliant: Yes |Onsemi BSS138 RoHS: Compliant Min Qty: 30000 Package Multiple: 1 Date Code: 1 Container: Reel | 45000 |
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$0.0320 | Buy Now |
DISTI #
58K8769
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Newark | N Channel Mosfet, 50V, 220Ma Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:220Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.3V Rohs Compliant: Yes |Onsemi BSS138 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 11323 |
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$0.0670 / $0.2730 | Buy Now |
DISTI #
BSS138CT-ND
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DigiKey | MOSFET N-CH 50V 220MA SOT23-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
618672 In Stock |
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$0.0335 / $0.2800 | Buy Now |
DISTI #
BSS138
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Avnet Americas | Power MOSFET, N Channel, 50 V, 220 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
BSS138
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Avnet Americas | Power MOSFET, N Channel, 50 V, 220 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.0334 / $0.0356 | Buy Now |
DISTI #
BSS138
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Avnet Americas | Power MOSFET, N Channel, 50 V, 220 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
BSS138
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Avnet Americas | Power MOSFET, N Channel, 50 V, 220 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
BSS138
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 220 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
BSS138
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 220 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
BSS138
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 220 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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RFQ |
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BSS138
onsemi
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Datasheet
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Compare Parts:
BSS138
onsemi
N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 0.22 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSS138. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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BSS138_F085 | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor, SOT-23 3L, 15000-TAPE REEL | BSS138 vs BSS138_F085 |
BSS138TA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | BSS138 vs BSS138TA |
BSS138LT1G | onsemi | $0.0968 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | BSS138 vs BSS138LT1G |
BSS138LT1 | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | BSS138 vs BSS138LT1 |
BSS138L | onsemi | $0.0534 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL | BSS138 vs BSS138L |
BSS138-7-F | Diodes Incorporated | $0.0340 | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138 vs BSS138-7-F |
BSS138LT3G | onsemi | $0.0565 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | BSS138 vs BSS138LT3G |
BSS138-F085 | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω, SOT-23 3L, 3000-REEL, Automotive Qualified | BSS138 vs BSS138-F085 |
BSS138-G | onsemi | Check for Price | N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 3L, 3000-REEL | BSS138 vs BSS138-G |
BSS138DW-7-F | Diodes Incorporated | $0.0542 | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTC PACKAGE-6 | BSS138 vs BSS138DW-7-F |
The BSS138 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
To ensure the BSS138 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V for a logic-level input, and the drain-source voltage (Vds) should be within the recommended operating range.
The maximum continuous drain current (Id) for the BSS138 is 1.4A, but it can handle up to 3.5A for short pulses (less than 10ms).
To protect the BSS138 from overvoltage, use a voltage clamp or a zener diode to limit the voltage across the drain-source terminals to the recommended maximum rating of 50V.
Yes, the BSS138 can be used as a switch in high-frequency circuits, but be aware of the device's switching characteristics, such as the rise and fall times, and ensure the circuit is properly designed to minimize ringing and oscillations.