Part Details for BSS138 by Infineon Technologies AG
Results Overview of BSS138 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138 Information
BSS138 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSS138
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 138000 |
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Chip 1 Exchange | INSTOCK | 4117 |
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Part Details for BSS138
BSS138 CAD Models
BSS138 Part Data Attributes
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BSS138
Infineon Technologies AG
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Datasheet
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BSS138
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOT-23 | |
| Package Description | SOT-23, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 0.22 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS138
This table gives cross-reference parts and alternative options found for BSS138. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| LBSS138LT1 | LRC Leshan Radio Co Ltd | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | BSS138 vs LBSS138LT1 |
| BSS138LT3G | onsemi | $0.0565 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | BSS138 vs BSS138LT3G |
| BSS138/S62Z | Texas Instruments | Check for Price | 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | BSS138 vs BSS138/S62Z |
| BSS138TR | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | BSS138 vs BSS138TR |
| BSS138 | Vishay Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, PLASTIC PACKAGE-3 | BSS138 vs BSS138 |
| BSS138 | National Semiconductor Corporation | Check for Price | TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | BSS138 vs BSS138 |
Resources and Additional Insights for BSS138
Reference Designs related to BSS138
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15W Qi transmitter for charging smartphones
The 15W wireless power transmitter evaluation module is a high-performance, easy-to-use development kit designed for applications up to 15W of power transfer. It supports an input voltage range of 9-12V and is compatible with QC 3.0 adapters.
BSS138 Frequently Asked Questions (FAQ)
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The BSS138 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and the source to ground. This helps to reduce oscillations and ensures stable operation.
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The maximum current rating for the BSS138 is 1.4 A, but it's recommended to derate the current to 1 A or less for reliable operation.
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Yes, the BSS138 can be used as a switch for high-frequency signals up to 1 GHz, but be aware of the device's parasitic capacitances and inductances, which may affect high-frequency performance.
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To minimize power losses, ensure the BSS138 is fully turned on or off, and use a low-resistance gate driver to reduce switching losses. Additionally, consider using a Schottky diode in parallel with the BSS138 to reduce reverse recovery losses.