Part Details for APT20M22JVR by Microchip Technology Inc
Results Overview of APT20M22JVR by Microchip Technology Inc
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
APT20M22JVR Information
APT20M22JVR by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT20M22JVR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5752
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Newark | Mosfet Mos5 200 V 22 Mohm Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT20M22JVR RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$26.4600 / $32.6000 | Buy Now |
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DISTI #
APT20M22JVR-ND
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DigiKey | MOSFET N-CH 200V 97A ISOTOP Min Qty: 1 Lead time: 20 Weeks Container: Tube |
20 In Stock |
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$26.4625 / $32.6000 | Buy Now |
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DISTI #
APT20M22JVR
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Avnet Americas | Transistor MOSFET N-Channel 200V 97A 4-Pin Screw Mount - Rail/Tube (Alt: APT20M22JVR) RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$26.4600 / $32.6000 | Buy Now |
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DISTI #
494-APT20M22JVR
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Mouser Electronics | MOSFET Modules MOSFET MOS5 200 V 22 mOhm SOT-227 RoHS: Compliant | 93 |
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$28.1600 / $32.6000 | Buy Now |
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DISTI #
APT20M22JVR
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Microchip Technology Inc | MOSFET MOS 5 200 V 22 mOhm SOT-227, SOT-227, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$24.9700 / $32.6000 | Buy Now |
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Onlinecomponents.com | MOSFET Transistor - N-Channel - 200V Drain to Source Voltage - 97A Continuous Drain Current - SOT-227-4, miniBLOC Package - Chassis Mount. RoHS: Compliant |
20 In Stock |
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$24.8800 / $30.1400 | Buy Now |
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DISTI #
84473812
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Verical | Trans MOSFET N-CH 200V 97A 4-Pin SOT-227 Tube RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2422 | Americas - 20 |
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$33.3320 / $39.1820 | Buy Now |
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DISTI #
APT20M22JVR
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TME | Module, single transistor, 200V, 97A, ISOTOP, screw, Idm: 388A, 450W Min Qty: 1 | 0 |
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$37.5000 / $47.1500 | RFQ |
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NAC | FG, MOSFET, 200V, 0.022_OHM, SOT-227 RoHS: Compliant Min Qty: 11 Package Multiple: 1 Container: Tube | 0 |
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$25.8200 / $30.2400 | Buy Now |
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DISTI #
APT20M22JVR
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 20 | 0 |
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$27.9500 / $29.0800 | Buy Now |
Part Details for APT20M22JVR
APT20M22JVR CAD Models
APT20M22JVR Part Data Attributes
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APT20M22JVR
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT20M22JVR
Microchip Technology Inc
Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 97 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 388 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT20M22JVR
This table gives cross-reference parts and alternative options found for APT20M22JVR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT20M22JVR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFR140N20P | IXYS Corporation | $12.9451 | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | APT20M22JVR vs IXFR140N20P |
| APT20M22JVRU3 | Microchip Technology Inc | $29.9948 | Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT20M22JVR vs APT20M22JVRU3 |
| STE110NS20FD | STMicroelectronics | Check for Price | 110A, 200V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4 | APT20M22JVR vs STE110NS20FD |
| IXFR90N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | APT20M22JVR vs IXFR90N20 |
| IXFR140N20P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | APT20M22JVR vs IXFR140N20P |
| IXFR90N20 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | APT20M22JVR vs IXFR90N20 |
APT20M22JVR Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the package can help to dissipate heat efficiently. Microchip provides a reference layout in the datasheet.
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Use a thermally conductive material (e.g., thermal tape or thermal grease) between the package and the heat sink, and ensure good airflow around the device. Also, follow the recommended operating conditions and derating guidelines.
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Use a metal shield or a conductive enclosure to enclose the device, and ensure good grounding of the shield to the PCB. Also, use EMI filters or common-mode chokes on the input and output lines.
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Use a voltage regulator or a voltage supervisor to regulate the input voltage and detect undervoltage conditions. Also, consider using overvoltage protection devices (e.g., TVS diodes) to protect the device from voltage spikes.
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Follow the recommended soldering profile and rework conditions specified in the datasheet, and use a soldering iron with a temperature-controlled tip to prevent overheating the device.