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Part Details for S29GL256P11TFIV10 by Infineon Technologies AG
Results Overview of S29GL256P11TFIV10 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
S29GL256P11TFIV10 Information
S29GL256P11TFIV10 by Infineon Technologies AG is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for S29GL256P11TFIV10
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
S29GL256P11TFIV10
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Avnet Americas | NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 56-Pin TSOP Tray - Trays (Alt: S29GL256P11TFIV10) RoHS: Compliant Min Qty: 455 Package Multiple: 455 Lead time: 111 Weeks, 0 Days Container: Tray | 0 |
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$6.5500 / $6.9692 | Buy Now |
Part Details for S29GL256P11TFIV10
S29GL256P11TFIV10 CAD Models
S29GL256P11TFIV10 Part Data Attributes
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S29GL256P11TFIV10
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
S29GL256P11TFIV10
Infineon Technologies AG
Flash, 256MX1, 110ns, PDSO56, TSOP-56
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TSOP-56 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Access Time-Max | 110 ns | |
| Alternate Memory Width | 1 | |
| Boot Block | BOTTOM/TOP | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PDSO-G56 | |
| JESD-609 Code | e3 | |
| Length | 18.4 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 256 | |
| Number of Terminals | 56 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | HTSSOP | |
| Package Equivalence Code | TSSOP56,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH | |
| Page Size | 8/16 words | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 128K | |
| Standby Current-Max | 0.000005 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 14 mm |
Alternate Parts for S29GL256P11TFIV10
This table gives cross-reference parts and alternative options found for S29GL256P11TFIV10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S29GL256P11TFIV10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| S29GL256P11TFI020 | Spansion | Check for Price | Flash, 256MX1, 110ns, PDSO56, 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TFI020 |
| S29GL256P11TFIV23 | Spansion | Check for Price | Flash, 256MX1, 110ns, PDSO56, 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TFIV23 |
| S29GL256P11TFI010 | AMD | Check for Price | Flash, 16MX16, 110ns, PDSO56, | S29GL256P11TFIV10 vs S29GL256P11TFI010 |
| S29GL256P11TFI013 | Infineon Technologies AG | Check for Price | Flash, 256MX1, 110ns, PDSO56, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TFI013 |
| S29GL256P11TAIV20 | Spansion | Check for Price | Flash, 256MX1, 110ns, PDSO56, 20 X 14 MM, MO-142EC, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TAIV20 |
| S29GL256P11TAIV23 | Cypress Semiconductor | Check for Price | Flash, 256MX1, 110ns, PDSO56, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TAIV23 |
| S29GL256P11TFI010 | Spansion | Check for Price | Flash, 256MX1, 110ns, PDSO56, 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TFI010 |
| S29GL256P11TFIV10 | AMD | Check for Price | Flash, 16MX16, 110ns, PDSO56, | S29GL256P11TFIV10 vs S29GL256P11TFIV10 |
| S29GL256P11TAIR23 | Spansion | Check for Price | Flash, 256MX1, 110ns, PDSO56, 20 X 14 MM, MO-142EC, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TAIR23 |
| S29GL256P11TAIV13 | Cypress Semiconductor | Check for Price | Flash, 256MX1, 110ns, PDSO56, TSOP-56 | S29GL256P11TFIV10 vs S29GL256P11TAIV13 |
S29GL256P11TFIV10 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the S29GL256P11TFIV10 is -40°C to +85°C.
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The HOLD# signal should be asserted low to pause the current operation and de-asserted high to resume the operation. During this time, the device will tri-state its outputs and ignore any input signals.
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The WP# signal is used to prevent accidental writes to the device. When WP# is asserted low, the device will ignore any write commands and protect the data from being modified.
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The S29GL256P11TFIV10 is a 256Mbit flash memory device, organized as 16,777,216 words of 16 bits each.
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The typical programming time for the S29GL256P11TFIV10 is 10-15 seconds for a full chip erase and 10-20 microseconds for a single byte/word program operation.