| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| International Rectifier | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN |
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| Microsemi Corporation | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 |
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| Infineon Technologies AG | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, |
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| Defense Logistics Agency | Power Field-Effect Transistor, 18A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN |
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