Part Details for JAN2N1714S by New England Semiconductor
Results Overview of JAN2N1714S by New England Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JAN2N1714S Information
JAN2N1714S by New England Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JAN2N1714S
JAN2N1714S CAD Models
JAN2N1714S Part Data Attributes
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JAN2N1714S
New England Semiconductor
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Datasheet
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JAN2N1714S
New England Semiconductor
Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 0.75 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.8 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/263A | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 16 MHz |
Alternate Parts for JAN2N1714S
This table gives cross-reference parts and alternative options found for JAN2N1714S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N1714S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTXV2N1714 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, | JAN2N1714S vs JANTXV2N1714 |
| JANTXV2N1714S | Microchip Technology Inc | Check for Price | Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin | JAN2N1714S vs JANTXV2N1714S |
| 2N1714E3 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN | JAN2N1714S vs 2N1714E3 |
| JANTXV2N1714S | New England Semiconductor | Check for Price | Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, | JAN2N1714S vs JANTXV2N1714S |