Datasheets
IXTT75N10L2 by:

Power Field-Effect Transistor,

Part Details for IXTT75N10L2 by Littelfuse Inc

Results Overview of IXTT75N10L2 by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXTT75N10L2 Information

IXTT75N10L2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTT75N10L2

Part # Distributor Description Stock Price Buy
DISTI # 03AH1856
Newark Disc Mosfet N-Ch Linear L2 To-268Aa/ Tube |Littelfuse IXTT75N10L2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $11.6600
  • 500 $10.8300
$10.8300 / $11.6600 Buy Now
DISTI # E02:0323_07043646
Arrow Electronics Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Lead time: 39 Weeks Date Code: 2443 Europe - 100
  • 1 $15.7108
  • 10 $15.7026
  • 25 $12.1945
  • 100 $11.1661
  • 500 $11.1325
$11.1325 / $15.7108 Buy Now
DISTI # 86270150
Verical Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Date Code: 2443 Americas - 100
  • 1 $15.5868
  • 10 $15.5797
  • 25 $12.0911
  • 100 $11.1937
$11.1937 / $15.5868 Buy Now

Part Details for IXTT75N10L2

IXTT75N10L2 CAD Models

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IXTT75N10L2 Part Data Attributes

IXTT75N10L2 Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXTT75N10L2 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 350 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Pulsed Drain Current-Max (IDM) 225 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for IXTT75N10L2

This table gives cross-reference parts and alternative options found for IXTT75N10L2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT75N10L2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXTH75N10L2 Littelfuse Inc $11.1495 Power Field-Effect Transistor, IXTT75N10L2 vs IXTH75N10L2

IXTT75N10L2 Related Parts

IXTT75N10L2 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the IXTT75N10L2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.

  • Yes, the IXTT75N10L2 is suitable for high-reliability applications. Littelfuse Inc. has qualified the device to meet the requirements of AEC-Q101, which ensures that it meets the stringent reliability standards for automotive and other high-reliability applications.

  • To ensure proper soldering, follow the recommended soldering profile: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. Additionally, use a solder with a melting point of 217°C to 221°C, and ensure the PCB is clean and free of oxidation.

  • The maximum allowed voltage transient for the IXTT75N10L2 is 100V for a duration of 100ns. Exceeding this limit may damage the device or affect its reliability.

  • Yes, you can use multiple IXTT75N10L2 devices in parallel to increase current handling. However, ensure that each device has its own heat sink and that the devices are properly matched to prevent current imbalance. Additionally, follow the recommended layout and thermal management guidelines to prevent overheating.

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