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Transistors / Power Field-Effect Transistors / IRFS4310ZTRLPBF
Datasheets
IRFS4310ZTRLPBF by:

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Part Details for IRFS4310ZTRLPBF by Infineon Technologies AG

Results Overview of IRFS4310ZTRLPBF by Infineon Technologies AG

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IRFS4310ZTRLPBF Information

IRFS4310ZTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFS4310ZTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 13AC9159
Newark Mosfet, N-Ch, 100V, 120A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFS4310ZTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 293
  • 1 $1.3700
$1.3700 Buy Now
DISTI # 86AK5335
Newark Mosfet, N-Ch, 100V, 120A, To-263 Rohs Compliant: Yes |Infineon IRFS4310ZTRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 800 $1.4200
  • 1,600 $1.3900
  • 3,200 $1.3600
$1.3600 / $1.4200 Buy Now
DISTI # IRFS4310ZTRLPBFCT-ND
DigiKey MOSFET N-CH 100V 120A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) 3550
In Stock
  • 1 $2.8700
  • 10 $1.8560
  • 100 $1.4210
  • 800 $0.9170
  • 1,600 $0.8886
  • 2,400 $0.8712
$0.8712 / $2.8700 Buy Now
DISTI # IRFS4310ZTRLPBF
Avnet Americas Power MOSFET, N Channel, 100 V, 120 A, 0.0048 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRFS4310ZTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 11200
  • 800 $0.7559
  • 1,600 $0.7215
  • 3,200 $0.7178
  • 4,800 $0.7141
  • 6,400 $0.7104
$0.7104 / $0.7559 Buy Now
DISTI # 13AC9159
Avnet Americas Power MOSFET, N Channel, 100 V, 120 A, 0.0048 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: 13AC9159) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Reel 293 Partner Stock
  • 1 $4.4500
  • 10 $3.2400
  • 25 $3.2300
  • 50 $2.3400
$2.3400 / $4.4500 Buy Now
DISTI # 942-IRFS4310ZTRLPBF
Mouser Electronics MOSFETs MOSFT 100V 127A 6mOhm 120nC Qg RoHS: Compliant 807
  • 1 $2.8700
  • 10 $1.8600
  • 100 $1.4300
  • 800 $0.8880
  • 2,400 $0.8710
$0.8710 / $2.8700 Buy Now
DISTI # E02:0323_00175347
Arrow Electronics Trans MOSFET N-CH Si 100V 127A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks Date Code: 2301 Europe - 4000
  • 800 $0.9077
  • 2,400 $0.8540
$0.8540 / $0.9077 Buy Now
DISTI # 69266087
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(2+Tab) D2PAK T/R Min Qty: 21 Package Multiple: 1 Date Code: 2237 Americas - 14764
  • 21 $1.3700
$1.3700 Buy Now
DISTI # 87023254
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2301 Americas - 4000
  • 800 $0.9052
  • 2,400 $0.8516
$0.8516 / $0.9052 Buy Now
DISTI # 76460705
Verical Trans MOSFET N-CH Si 100V 127A 3-Pin(2+Tab) D2PAK T/R Min Qty: 37 Package Multiple: 1 Americas - 293
  • 37 $2.0648
  • 50 $1.9861
  • 100 $1.9187
  • 250 $1.8605
$1.8605 / $2.0648 Buy Now
Rochester Electronics IRFS4310ZTRLPBF - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 727
  • 100 $1.1800
  • 500 $1.0600
  • 1,000 $0.9798
  • 10,000 $0.8736
  • 100,000 $0.7319
$0.7319 / $1.1800 Buy Now
Future Electronics Single N-Channel 100V 6 mOhm 120 nC HEXFET� Power Mosfet - D2PAK Min Qty: 800 Package Multiple: 800 5600
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  • 800 $0.7650
  • 1,600 $0.7550
  • 2,400 $0.7500
  • 3,200 $0.7450
  • 4,000 $0.7300
$0.7300 / $0.7650 Buy Now
DISTI # IRFS4310ZTRLPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 14764
  • 1 $2.8000
  • 10 $1.8200
  • 50 $1.6100
  • 100 $1.4700
  • 500 $1.2500
  • 800 $1.1900
  • 3,200 $1.1000
$1.1000 / $2.8000 Buy Now
DISTI # SP001557376
EBV Elektronik Power MOSFET N Channel 100 V 120 A 00048 ohm TO263 D2PAK Surface Mount (Alt: SP001557376) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 19 Weeks, 0 Days EBV - 14400
Buy Now
New Advantage Corporation Single N-Channel 100V 6 mOhm 120 nC HEXFET� Power Mosfet - D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 800 12800
  • 800 $1.4100
  • 12,800 $1.3000
$1.3000 / $1.4100 Buy Now
Win Source Electronics MOSFET N-CH 100V 120A D2PAK 15120
  • 60 $1.0443
  • 120 $0.9769
  • 185 $0.9433
  • 265 $0.8759
  • 345 $0.8422
  • 430 $0.8085
$0.8085 / $1.0443 Buy Now

Part Details for IRFS4310ZTRLPBF

IRFS4310ZTRLPBF Part Data Attributes

Parametric Data
IRFS4310ZTRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFS4310ZTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 560 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

IRFS4310ZTRLPBF Related Parts

IRFS4310ZTRLPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFS4310ZTRLPBF is -55°C to 175°C.

  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure proper thermal management. Additionally, consider using a thermal interface material to improve heat dissipation.

  • To minimize EMI, use a multi-layer PCB with a solid ground plane, and keep the power and signal traces as short as possible. Also, use a shielded cable or a ferrite bead to filter out high-frequency noise.

  • Yes, the IRFS4310ZTRLPBF is rated for high-voltage applications up to 500V. However, ensure that the device is properly derated for the specific application, and follow the recommended design guidelines for high-voltage circuits.

  • To troubleshoot issues, check the device's thermal performance, ensure proper PCB layout and assembly, and verify the input and output voltage levels. Also, use a thermal camera or an oscilloscope to monitor the device's temperature and voltage waveforms.

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