Part Details for IPB60R199CP by Infineon Technologies AG
Results Overview of IPB60R199CP by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPB60R199CP Information
IPB60R199CP by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB60R199CP
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB60R199CP
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Mouser Electronics | MOSFETs N-Ch 650V 16A D2PAK-2 CoolMOS CP RoHS: Compliant | 914 |
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$1.4900 / $3.4600 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant |
788 Partner Stock |
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$2.4100 / $3.4300 | Buy Now |
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Win Source Electronics | MOSFET N-CH 650V 16A TO-263 | 4521 |
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$2.1760 / $3.2640 | Buy Now |
Part Details for IPB60R199CP
IPB60R199CP CAD Models
IPB60R199CP Part Data Attributes
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IPB60R199CP
Infineon Technologies AG
Buy Now
Datasheet
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IPB60R199CP
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 436 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 139 W | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
IPB60R199CP Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPB60R199CP is -40°C to 150°C.
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To ensure reliability, follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management. Additionally, consider using a gate driver with a high current capability and a low voltage drop.
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The recommended gate resistance for the IPB60R199CP is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the IPB60R199CP can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the gate drive and layout are designed to minimize differences in switching times and voltage drops.
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To protect the IPB60R199CP, use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS) or a zener diode, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.