Part Details for BSB017N03LX3GXT by Infineon Technologies AG
Results Overview of BSB017N03LX3GXT by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
BSB017N03LX3GXT Information
BSB017N03LX3GXT by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSB017N03LX3GXT
BSB017N03LX3GXT CAD Models
BSB017N03LX3GXT Part Data Attributes
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BSB017N03LX3GXT
Infineon Technologies AG
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Datasheet
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BSB017N03LX3GXT
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-MBCC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 225 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 147 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSB017N03LX3GXT
This table gives cross-reference parts and alternative options found for BSB017N03LX3GXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSB017N03LX3GXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17556Q5BT | Texas Instruments | $1.3512 | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm 8-VSON-CLIP -55 to 150 | BSB017N03LX3GXT vs CSD17556Q5BT |
| BSB017N03LX3GXUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 | BSB017N03LX3GXT vs BSB017N03LX3GXUMA1 |
| AP1002BMX | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 32 A, 30 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, GREENFET PACKAGE-3, FET General Purpose Power | BSB017N03LX3GXT vs AP1002BMX |
| BSC014N03MSGATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSB017N03LX3GXT vs BSC014N03MSGATMA1 |