Datasheets
7204L30DB by:

4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube

Part Details for 7204L30DB by Renesas Electronics Corporation

Results Overview of 7204L30DB by Renesas Electronics Corporation

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7204L30DB Information

7204L30DB by Renesas Electronics Corporation is an FIFO.
FIFOs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for 7204L30DB

7204L30DB CAD Models

7204L30DB Part Data Attributes

7204L30DB Renesas Electronics Corporation
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7204L30DB Renesas Electronics Corporation 4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code CDIP
Package Description CERAMIC, DIP-28
Pin Count 28
Manufacturer Package Code CD28
Reach Compliance Code not_compliant
ECCN Code NLR
HTS Code 8542320071
Samacsys Manufacturer Renesas Electronics
Access Time-Max 30 ns
Additional Feature RETRANSMIT
Clock Frequency-Max (fCLK) 25 MHz
Cycle Time 40 ns
JESD-30 Code R-CDIP-T28
JESD-609 Code e0
Length 37.1475 mm
Memory Density 36864 bit
Memory IC Type BI-DIRECTIONAL FIFO
Memory Width 9
Moisture Sensitivity Level 1
Number of Functions 1
Number of Terminals 28
Number of Words 4096 words
Number of Words Code 4000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 4KX9
Output Enable NO
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Code DIP
Package Equivalence Code DIP28,.6
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified
Screening Level MIL-STD-883 Class B
Seated Height-Max 5.08 mm
Standby Current-Max 0.004 A
Supply Current-Max 0.15 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish Tin/Lead (Sn63Pb37)
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for 7204L30DB

This table gives cross-reference parts and alternative options found for 7204L30DB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 7204L30DB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CY7C432-30DMB Cypress Semiconductor Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 7204L30DB vs CY7C432-30DMB
7204L30TDB Renesas Electronics Corporation Check for Price 4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube 7204L30DB vs 7204L30TDB
CY7C433-30DMB Cypress Semiconductor Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 7204L30DB vs CY7C433-30DMB
5962-9071506MUX Cypress Semiconductor Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 7204L30DB vs 5962-9071506MUX
CY7C433-30DI Cypress Semiconductor Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 7204L30DB vs CY7C433-30DI
5962-9071506MUA Teledyne e2v Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 7204L30DB vs 5962-9071506MUA
CY7C433-30DC Cypress Semiconductor Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 7204L30DB vs CY7C433-30DC
5962-8956806UA Renesas Electronics Corporation Check for Price 4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube 7204L30DB vs 5962-8956806UA
CY7C433-30DMB Teledyne e2v Check for Price FIFO 7204L30DB vs CY7C433-30DMB
IDT7204S30TDB Integrated Device Technology Inc Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, THIN, CERDIP-28 7204L30DB vs IDT7204S30TDB
Part Number Manufacturer Composite Price Description Compare
CL3P-67204V-55 Matra MHS Check for Price FIFO, 4KX9, 55ns, Asynchronous, CMOS, PDIP28 7204L30DB vs CL3P-67204V-55
SN74ACT7204L35NP Texas Instruments Check for Price 4KX9 OTHER FIFO, PDIP28, PLASTIC, DIP-28 7204L30DB vs SN74ACT7204L35NP
SM1I-67204L-30/883 Matra MHS Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28 7204L30DB vs SM1I-67204L-30/883
SL1I-67204V-55LH Matra MHS Check for Price FIFO, 4KX9, 55ns, Asynchronous, CMOS, CDIP28 7204L30DB vs SL1I-67204V-55LH
SL1I-67204L-55FH Matra MHS Check for Price FIFO, 4KX9, 55ns, Asynchronous, CMOS, CDIP28 7204L30DB vs SL1I-67204L-55FH
5962-8956806QTC Microchip Technology Inc Check for Price FIFO, 4KX9, 30ns, Asynchronous, CMOS 7204L30DB vs 5962-8956806QTC
CY7C433A-10PC Cypress Semiconductor Check for Price FIFO, 4KX9, 10ns, Asynchronous, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 7204L30DB vs CY7C433A-10PC
IDT7204L80TC Integrated Device Technology Inc Check for Price FIFO, 4KX9, 80ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, THIN, CERAMIC, DIP-28 7204L30DB vs IDT7204L80TC
QS7224-33P Quality Semiconductor Inc Check for Price FIFO, 4KX9, Synchronous, CMOS, PDIP28, 7204L30DB vs QS7224-33P
IDT7204S20DB Integrated Device Technology Inc Check for Price FIFO, 4KX9, 20ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERDIP-28 7204L30DB vs IDT7204S20DB

7204L30DB Related Parts

7204L30DB Frequently Asked Questions (FAQ)

  • Renesas provides a recommended PCB layout guide in their application note (APN) documents, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.

  • The power-up sequence is critical for the 7204L30DB. Renesas recommends powering up the VCC pin first, followed by the VDD pin, and then the input signals. A specific power-up sequence is provided in the datasheet and application notes.

  • To reduce EMI and noise, Renesas recommends using a multi-layer PCB, placing decoupling capacitors close to the device, and using a common mode choke or ferrite bead on the power lines. Additionally, shielding and grounding techniques can be employed to minimize radiation.

  • Renesas recommends using a voltage supervisor or a dedicated overvoltage protection (OVP) circuit to prevent damage from voltage spikes or surges. The OVP circuit should be designed to trigger at a voltage slightly above the maximum recommended operating voltage.

  • In high-temperature environments, thermal design is critical. Renesas recommends using a heat sink or thermal pad, and ensuring good airflow around the device. The thermal resistance of the PCB and surrounding components should also be considered to prevent thermal runaway.

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