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4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
7204L30DB by Renesas Electronics Corporation is an FIFO.
FIFOs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
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7204L30DB
Renesas Electronics Corporation
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Datasheet
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7204L30DB
Renesas Electronics Corporation
4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | CDIP | |
Package Description | CERAMIC, DIP-28 | |
Pin Count | 28 | |
Manufacturer Package Code | CD28 | |
Reach Compliance Code | not_compliant | |
ECCN Code | NLR | |
HTS Code | 8542320071 | |
Samacsys Manufacturer | Renesas Electronics | |
Access Time-Max | 30 ns | |
Additional Feature | RETRANSMIT | |
Clock Frequency-Max (fCLK) | 25 MHz | |
Cycle Time | 40 ns | |
JESD-30 Code | R-CDIP-T28 | |
JESD-609 Code | e0 | |
Length | 37.1475 mm | |
Memory Density | 36864 bit | |
Memory IC Type | BI-DIRECTIONAL FIFO | |
Memory Width | 9 | |
Moisture Sensitivity Level | 1 | |
Number of Functions | 1 | |
Number of Terminals | 28 | |
Number of Words | 4096 words | |
Number of Words Code | 4000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -55 °C | |
Organization | 4KX9 | |
Output Enable | NO | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Code | DIP | |
Package Equivalence Code | DIP28,.6 | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 240 | |
Qualification Status | Not Qualified | |
Screening Level | MIL-STD-883 Class B | |
Seated Height-Max | 5.08 mm | |
Standby Current-Max | 0.004 A | |
Supply Current-Max | 0.15 mA | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 4.5 V | |
Supply Voltage-Nom (Vsup) | 5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | MILITARY | |
Terminal Finish | Tin/Lead (Sn63Pb37) | |
Terminal Form | THROUGH-HOLE | |
Terminal Pitch | 2.54 mm | |
Terminal Position | DUAL | |
Width | 7.62 mm |
This table gives cross-reference parts and alternative options found for 7204L30DB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 7204L30DB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
CY7C432-30DMB | Cypress Semiconductor | Check for Price | FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | 7204L30DB vs CY7C432-30DMB |
7204L30TDB | Renesas Electronics Corporation | Check for Price | 4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube | 7204L30DB vs 7204L30TDB |
CY7C433-30DMB | Cypress Semiconductor | Check for Price | FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | 7204L30DB vs CY7C433-30DMB |
5962-9071506MUX | Cypress Semiconductor | Check for Price | FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | 7204L30DB vs 5962-9071506MUX |
CY7C433-30DI | Cypress Semiconductor | Check for Price | FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | 7204L30DB vs CY7C433-30DI |
5962-9071506MUA | Teledyne e2v | Check for Price | FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, | 7204L30DB vs 5962-9071506MUA |
CY7C433-30DC | Cypress Semiconductor | Check for Price | FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | 7204L30DB vs CY7C433-30DC |
5962-8956806UA | Renesas Electronics Corporation | Check for Price | 4K x 9 AsyncFIFO, 5.0V, CDIP13/Tube | 7204L30DB vs 5962-8956806UA |
CY7C433-30DMB | Teledyne e2v | Check for Price | FIFO | 7204L30DB vs CY7C433-30DMB |
IDT7204S30TDB | Integrated Device Technology Inc | Check for Price | FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, THIN, CERDIP-28 | 7204L30DB vs IDT7204S30TDB |
Renesas provides a recommended PCB layout guide in their application note (APN) documents, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.
The power-up sequence is critical for the 7204L30DB. Renesas recommends powering up the VCC pin first, followed by the VDD pin, and then the input signals. A specific power-up sequence is provided in the datasheet and application notes.
To reduce EMI and noise, Renesas recommends using a multi-layer PCB, placing decoupling capacitors close to the device, and using a common mode choke or ferrite bead on the power lines. Additionally, shielding and grounding techniques can be employed to minimize radiation.
Renesas recommends using a voltage supervisor or a dedicated overvoltage protection (OVP) circuit to prevent damage from voltage spikes or surges. The OVP circuit should be designed to trigger at a voltage slightly above the maximum recommended operating voltage.
In high-temperature environments, thermal design is critical. Renesas recommends using a heat sink or thermal pad, and ensuring good airflow around the device. The thermal resistance of the PCB and surrounding components should also be considered to prevent thermal runaway.