Part Details for 2SA1204 by Toshiba America Electronic Components
Results Overview of 2SA1204 by Toshiba America Electronic Components
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2SA1204 Information
2SA1204 by Toshiba America Electronic Components is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2SA1204
2SA1204 CAD Models
2SA1204 Part Data Attributes
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2SA1204
Toshiba America Electronic Components
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Datasheet
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2SA1204
Toshiba America Electronic Components
TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-62 | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 0.8 A | |
| Collector-Emitter Voltage-Max | 30 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 35 | |
| JESD-30 Code | R-PSSO-F3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 120 MHz | |
| VCEsat-Max | 0.7 V |