Part Details for 2N5555 by Motorola Semiconductor Products
Results Overview of 2N5555 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N5555 Information
2N5555 by Motorola Semiconductor Products is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N5555
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 60 |
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RFQ | ||
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ES Components | MOT 2N5555 UNINSPECTED BARE DIE | 1313 in Stock |
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RFQ |
Part Details for 2N5555
2N5555 CAD Models
2N5555 Part Data Attributes
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2N5555
Motorola Semiconductor Products
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Datasheet
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2N5555
Motorola Semiconductor Products
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-226AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | TO-226AA, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain-source On Resistance-Max | 150 Ω | |
| FET Technology | JUNCTION | |
| Feedback Cap-Max (Crss) | 1.2 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.35 W | |
| Power Dissipation-Max (Abs) | 0.31 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N5555 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N5555 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
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While the 2N5555 can be used as a switch, it's not ideal for high-frequency applications due to its relatively high transition frequency (ft) of around 100 MHz. For high-frequency switching applications, a transistor with a higher ft and lower capacitance is recommended.
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To ensure reliable operation of the 2N5555 in a high-temperature environment, it's essential to provide adequate heat sinking, ensure good thermal conductivity, and avoid operating the device near its maximum junction temperature (Tj) rating. Additionally, consider using a transistor with a higher Tj rating or a more thermally robust package.
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While the 2N5555 can be used as a linear amplifier, it's not the most suitable choice due to its relatively low current gain (hFE) and high output impedance. For linear amplifier applications, a transistor with a higher hFE and lower output impedance is recommended.
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The recommended storage temperature range for the 2N5555 is typically between -55°C and 150°C, as specified in the datasheet. However, it's essential to follow proper storage and handling procedures to prevent damage to the device.