Part Details for 1N3595US by Microsemi Corporation
Results Overview of 1N3595US by Microsemi Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
1N3595US Information
1N3595US by Microsemi Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for 1N3595US
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1N3595US
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Richardson RFPD | GENERAL PURPOSE DIODE RoHS: Not Compliant Min Qty: 100 | 0 |
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$9.2700 / $9.5200 | Buy Now |
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Vyrian | Diodes | 85 |
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RFQ |
Part Details for 1N3595US
1N3595US CAD Models
1N3595US Part Data Attributes
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1N3595US
Microsemi Corporation
Buy Now
Datasheet
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Compare Parts:
1N3595US
Microsemi Corporation
Rectifier Diode, 1 Element, 0.2A, Silicon,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.70 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1 V | |
| JESD-30 Code | O-LELF-R2 | |
| JESD-609 Code | e0 | |
| Non-rep Pk Forward Current-Max | 4 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 0.2 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Not Qualified | |
| Reverse Current-Max | 0.001 µA | |
| Reverse Recovery Time-Max | 3 µs | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for 1N3595US
This table gives cross-reference parts and alternative options found for 1N3595US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N3595US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MCL4154-13 | Diodes Incorporated | Check for Price | Rectifier Diode, 1 Element, 0.1A, 25V V(RRM), Silicon, GLASS, MICROMELF-2 | 1N3595US vs MCL4154-13 |
| 1SS307TE85R | Toshiba America Electronic Components | Check for Price | DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | 1N3595US vs 1SS307TE85R |
| SDR1DSMTXV | Solid State Devices Inc (SSDI) | Check for Price | Rectifier Diode, Schottky, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED, SM, 2 PIN | 1N3595US vs SDR1DSMTXV |
| 1N1411 | Semitronics Corp | Check for Price | Rectifier Diode, 1 Element, 0.125A, 1800V V(RRM), Silicon, | 1N3595US vs 1N1411 |
| 1N4003CSM | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 1A, 200V, SILICON, SIGNAL DIODE, HERMETIC SEALED, CERAMIC, LCC1-3 | 1N3595US vs 1N4003CSM |
| RL101G | International Semiconductor Inc | Check for Price | Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, PLASTIC, A-405, 2 PIN | 1N3595US vs RL101G |
| UF1010S | Promax-Johnton Electronic Corporation | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, A-405, 2 PIN | 1N3595US vs UF1010S |
| BAV99 | KEC | Check for Price | Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, SOT-23, 3 PIN | 1N3595US vs BAV99 |
| ESJA59-12 | Fuji Electric Co Ltd | Check for Price | Rectifier Diode, 1 Element, 0.005A, 12000V V(RRM), Silicon, PLASTIC PACKAGE-2 | 1N3595US vs ESJA59-12 |
| 1SS221-L | NEC Electronics America Inc | Check for Price | Rectifier Diode, 1 Element, 0.1A, Silicon, PLASTIC, SC-59, 3 PIN | 1N3595US vs 1SS221-L |
1N3595US Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 1N3595US is -55°C to 150°C.
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Yes, the 1N3595US is a radiation-hardened device, making it suitable for use in space and other high-radiation environments.
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The maximum power dissipation for the 1N3595US is 500 mW.
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Yes, the 1N3595US is compatible with standard ECL (Emitter-Coupled Logic) logic.
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The typical propagation delay for the 1N3595US is 2.5 ns.