Parametric results for: 2sc4116-gr(5lmaa,f under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 0.47 2 BUILT IN BIAS RESISTANCE RATIO IS 1 7 BUILT IN BIAS RESISTANCE RATIO IS 10 2 BUILT IN BIAS RESISTANCE RATIO IS 21.36 2 BUILT IN BIAS RESISTANCE RATIO IS 4.7 3 LOW NOISE 16

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Collector Current-Max (IC) (5)

100 mA 21 150 mA 27 300 mA 2 500 mA 2 800 mA 1

Min (A) - Max (A)

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3.5 pF 3 7 pF 2

Min (pF) - Max (pF)

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Collector-Emitter Voltage-Max (6)

20 V 2 25 V 1 30 V 1 50 V 45 120 V 3 300 V 1

Min (V) - Max (V)

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Configuration (5)

COMMON EMITTER, 2 ELEMENTS 1 SEPARATE, 2 ELEMENTS 14 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 13 SINGLE 21 SINGLE WITH BUILT-IN RESISTOR 4

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DC Current Gain-Min (hFE) (9)

30.0 2 40.0 2 50.0 3 70.0 2 80.0 10 120.0 17 160.0 1 200.0 12 350.0 4

Min - Max

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TO-236 2

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R-PDSO-F6 15 R-PDSO-G3 25 R-PDSO-G5 1 R-PDSO-G6 12

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Manufacturer (1)

Toshiba America Electronic Components 53

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1 5

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Number of Elements (2)

1 25 2 28

Min - Max

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Number of Terminals (3)

3 25 5 1 6 27

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125.0 °C 7

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PLASTIC/EPOXY 53

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RECTANGULAR 53

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SMALL OUTLINE 53

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Active 1 Obsolete 52

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260 5 NOT SPECIFIED 28

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Polarity/Channel Type (3)

NPN 26 NPN AND PNP 11 PNP 16

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300 mW 5

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150 mW 2 300 mW 5

Min (W) - Max (W)

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Surface Mount (1)

YES 53

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Transition Frequency-Nom (fT) (9)

30 MHz 2 55 MHz 1 80 MHz 24 100 MHz 3 120 MHz 1 150 MHz 3 200 MHz 4 250 MHz 14 300 MHz 1

Min (MHz) - Max (MHz)

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