Parametric results for: 2SK2009(TE85LF) under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

Drain Current-Max (ID) (1)

200 mA 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

Active 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

200 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply