Parametric results for: mmftn20 under Small Signal Field-Effect Transistors

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2N7002K-TP
Micro Commercial Components
$0.0557 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 340 mA 3 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL MICRO COMMERCIAL COMPONENTS CORP PACKAGE-3 3 compliant EAR99 MCC
MMFT8472DW
Diotec Semiconductor AG
$0.0558 Yes Active NOT SPECIFIED NOT SPECIFIED DIOTEC SEMICONDUCTOR AG compliant EAR99
2N7002KW-AU_R1_000A1
PanJit Semiconductor
$0.0558 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 250 mA 3 Ω ULTRA LOW RESISTANCE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 AEC-Q101 NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL PANJIT INTERNATIONAL INC compliant EAR99 PANJIT
SSM6N7002CFU,LF(T
Toshiba America Electronic Components
$0.0559 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 60 V 2 170 mA 4.7 Ω 0.7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 285 mW SWITCHING SILICON R-PDSO-G6 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TOSHIBA CORP unknown EAR99
SSM3K7002CFU,LF(T
Toshiba America Electronic Components
$0.0560 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 3 60 V 1 170 mA 4.7 Ω 0.7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 700 mW SWITCHING SILICON R-PDSO-G3 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TOSHIBA CORP unknown EAR99 Toshiba
DMN53D0LT-7
Diodes Incorporated
$0.0563 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 350 mA 1.6 Ω 4 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G3 e3 MIL-STD-202 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC SOT-523, 3 PIN compliant EAR99 Diodes Incorporated
BSS84-7-F
Diodes Incorporated
$0.0563 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω HIGH RELIABILITY, LOW THRESHOLD 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 3 compliant EAR99 Diodes Incorporated
MMBF170LT1G
onsemi
$0.0566 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI TO-236, 3 PIN 3 compliant EAR99 onsemi SOT-23 (TO-236) 3 LEAD 318 8541.29.00.95
DMN63D8L-7
Diodes Incorporated
$0.0567 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 350 mA 4.5 Ω 2.2 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 520 mW SWITCHING SILICON R-PDSO-G3 e3 MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC SOT-23, 3 PIN compliant EAR99 Diodes Incorporated
BSS138LT3G
onsemi
$0.0567 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 3 compliant EAR99 onsemi SOT-23 (TO-236) 3 LEAD 318