Parametric results for: ixfh80n10q under Power Field-Effect Transistors

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NVMFS5C673NLWFAFT1G
onsemi
$0.0456 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 60 V 1 50 A 13 mΩ 88 mJ 11 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 46 W 290 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL ONSEMI DFNW5 4.90x5.90x1.00, 1.27P SO-8FLWF, DFNW5, 6 PIN 507BA not_compliant EAR99 2017-02-24 onsemi
SI3493DDV-T1-GE3
Vishay Intertechnologies
$0.0458 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 20 V 1 8 A 24 mΩ 5 mJ 200 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.6 W 32 A SWITCHING SILICON 205 ns 83 ns R-PDSO-G6 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL VISHAY INTERTECHNOLOGY INC TSOP-6 compliant EAR99 2017-03-22 Vishay
DMN2041UVT-7
Diodes Incorporated
$0.0461 Yes Active N-CHANNEL YES COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 6 20 V 2 5.8 A 28 mΩ 79 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.44 W 36 A SWITCHING SILICON R-PDSO-G6 e3 MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC SOT-26 compliant EAR99 2019-10-15 Diodes Incorporated
SQA410CEJW-T1_GE3
Vishay Intertechnologies
$0.0464 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 20 V 1 7.8 A 28 mΩ 5 mJ 58 pF TRENCH MOSFET ENHANCEMENT MODE 13.6 W 30 A SILICON 60 ns 32 ns S-PDSO-N6 AEC-Q101 175 °C -55 °C PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD DUAL VISHAY INTERTECHNOLOGY INC SC-70W, 6 PIN unknown Vishay
NX138AKR
Nexperia
$0.0467 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 190 mA 4.5 Ω 1.5 pF TRENCH MOSFET ENHANCEMENT MODE 1.33 W 765 mA SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 SOT23 compliant EAR99 Nexperia 3
WMS20N700SKX
WeEn Semiconductor Co Ltd
$0.0469 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.5 A 70 mΩ 25 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.4 W 1.4 W 14 A SWITCHING SILICON R-PDSO-G3 e3 IEC-60134 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL WEEN SEMICONDUCTORS CO LTD unknown EAR99
DMN2310UWQ-7
Diodes Incorporated
$0.0481 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 1.3 A 200 mΩ 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 550 mW 4.4 A SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101; IATF 16949; MIL-STD-202 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL DIODES INC SOT-323, 3 PIN compliant Diodes Incorporated
YJL03G10A
Yangzhou Yangjie Electronics Co Ltd
$0.0496 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 3 A 140 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.2 W 21 A SWITCHING SILICON R-PDSO-G3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99 Yangzhou Yangjie Electronic Technology Co., Ltd.
SSM3K324R,LF(T
Toshiba America Electronic Components
$0.0498 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 4 A 56 mΩ 13 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W 10 A SWITCHING SILICON R-PDSO-F3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP SOT-23F, 3 PIN unknown EAR99 Toshiba
SSM3J331R,LF(T
Toshiba America Electronic Components
$0.0552 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4 A 75 mΩ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W 10 A SWITCHING SILICON R-PDSO-F3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP SOT-23F, 3 PIN unknown EAR99 Toshiba