Parametric results for: MASK ROMs

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K3N7V1000C-YC12
Samsung Semiconductor
Check for Price Buy No Obsolete 67.1089 Mbit 16 4MX16 3.3 V 120 ns MASK ROM 8 1 4000000 4.1943 M ASYNCHRONOUS PARALLEL 30 µA 40 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G48 Not Qualified e0 70 °C 48 PLASTIC/EPOXY TSOP1 TSSOP48,.71,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL 1.2 mm 16.4 mm 12 mm SAMSUNG SEMICONDUCTOR INC TSOP1 TSOP1, TSSOP48,.71,20 48 compliant EAR99 8542.32.00.71
GM23C16000FW-12
Goldstar Electron Co Ltd
Check for Price Buy Obsolete 16.7772 Mbit 16 1MX16 5 V 1.1 µs MASK ROM 8 1 1000000 1.0486 M ASYNCHRONOUS PARALLEL 50 µA CMOS COMMERCIAL R-PDSO-G44 Not Qualified 70 °C 44 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES GULL WING DUAL GOLDSTAR ELECTRON CO LTD unknown
TMS4732-15NL
Texas Instruments
Check for Price Buy No No Obsolete 32.768 kbit 8 4KX8 5 V 150 ns MASK ROM 1 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 60 µA 5.5 V 4.5 V NMOS COMMERCIAL R-PDIP-T24 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 24 PLASTIC/EPOXY DIP DIP24,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 5.08 mm 31.75 mm 15.24 mm TEXAS INSTRUMENTS INC DIP, DIP24,.6 not_compliant EAR99 8542.32.00.71
MX23C4100PC-20
Macronix International Co Ltd
Check for Price Buy No Obsolete 4.1943 Mbit 16 256KX16 5 V 200 ns MASK ROM 8 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 100 µA 60 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDIP-T40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY DIP DIP40,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.9022 mm 52.07 mm 15.24 mm MACRONIX INTERNATIONAL CO LTD DIP DIP, DIP40,.6 40 unknown EAR99 8542.32.00.71
GM23C64001-12
LG Semicon Co Ltd
Check for Price Buy No Transferred 67.1089 Mbit 8 8MX8 5 V 120 ns MASK ROM 8000000 8.3886 M 100 µA CMOS COMMERCIAL R-PDIP-T36 Not Qualified e0 70 °C 36 PLASTIC/EPOXY DIP DIP36,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL LG SEMICON CO LTD unknown EAR99 8542.32.00.71
IMP23201D-11
Imp Inc
Check for Price Buy No Obsolete 3.072 kbit 8 384X8 5 V 900 ns MASK ROM 1 256000 262.144 k ASYNCHRONOUS PARALLEL 50 µA MOS COMMERCIAL R-PDIP-T32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY DIP DIP32,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL IMP INC DIP, DIP32,.3 unknown EAR99 8542.32.00.71
HN62435TT-15
Hitachi Ltd
Check for Price Buy Obsolete 4.1943 Mbit 8 512KX8 5 V 250 ns MASK ROM USER CONFIGURABLE AS 256K X 16; TTL COMPATIBLE I/O 1 512000 524.288 k ASYNCHRONOUS PARALLEL 50 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified 70 °C 44 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm HITACHI LTD TSOP2 TSOP2, 44 unknown EAR99 8542.32.00.71
MM52116D
National Semiconductor Corporation
Check for Price Buy No Obsolete 8.3886 Mbit 8 1MX8 5 V 200 ns MASK ROM 1 2000 2.048 k ASYNCHRONOUS PARALLEL 100 µA 5.5 V 4.5 V MOS COMMERCIAL R-XDIP-T24 Not Qualified e0 70 °C 24 CERAMIC DIP DIP24,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL NATIONAL SEMICONDUCTOR CORP compliant EAR99 8542.32.00.71
K3P7U1000B-TC120
Samsung Semiconductor
Check for Price Buy Obsolete 67.1089 Mbit 16 4MX16 3 V 120 ns MASK ROM 8 1 4000000 4.1943 M ASYNCHRONOUS PARALLEL 60 µA 3.3 V 2.7 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified 70 °C 44 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, 44 unknown EAR99 8542.32.00.71
LH532000BD
Sharp Corp
Check for Price Buy Obsolete 2.0972 Mbit 8 256KX8 5 V 150 ns MASK ROM CONFIGURABLE AS 128K X 16 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 50 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDIP-T40 Not Qualified 70 °C 40 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL SHARP CORP 0.600 INCH, PLASTIC, DIP-40 unknown