Part Details for ZXMN6A25KTC by Zetex / Diodes Inc
Results Overview of ZXMN6A25KTC by Zetex / Diodes Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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ZXMN6A25KTC Information
ZXMN6A25KTC by Zetex / Diodes Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN6A25KTC
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88774400
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Verical | Trans MOSFET N-CH 60V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2319 | Americas - 5000 |
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$0.3938 | Buy Now |
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Quest Components | 7 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET | 276 |
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$0.5040 / $1.6800 | Buy Now |
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Quest Components | 7 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET | 24 |
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$0.5198 / $0.8664 | Buy Now |
Part Details for ZXMN6A25KTC
ZXMN6A25KTC CAD Models
ZXMN6A25KTC Part Data Attributes
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ZXMN6A25KTC
Zetex / Diodes Inc
Buy Now
Datasheet
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ZXMN6A25KTC
Zetex / Diodes Inc
Power Field-Effect Transistor, 7A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | ZETEX PLC | |
Package Description | DPAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
ZXMN6A25KTC Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the ZXMN6A25KTC is a standard SOT223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure proper thermal management, it is recommended to provide a thermal pad on the PCB, use a heat sink if necessary, and ensure good airflow around the device. The maximum junction temperature (Tj) should not exceed 150°C.
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The maximum safe operating area (SOA) for the ZXMN6A25KTC is defined by the voltage and current ratings. The device should not be operated beyond the maximum voltage rating of 25V and the maximum current rating of 6A.
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To prevent electrostatic discharge (ESD) damage, it is recommended to handle the ZXMN6A25KTC with an ESD wrist strap or mat, and to ensure that the device is stored in an ESD-protected environment.
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The recommended storage temperature range for the ZXMN6A25KTC is -40°C to 125°C.