Datasheets
ZXMN6A09GTA by:

Small Signal Field-Effect Transistor, 5.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4

Part Details for ZXMN6A09GTA by Zetex / Diodes Inc

Results Overview of ZXMN6A09GTA by Zetex / Diodes Inc

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ZXMN6A09GTA Information

ZXMN6A09GTA by Zetex / Diodes Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for ZXMN6A09GTA

Part # Distributor Description Stock Price Buy
DISTI # 88774494
Verical Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2319 Americas - 36000
  • 1,000 $0.4710
$0.4710 Buy Now
DISTI # 87732263
Verical Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2425 Americas - 9000
  • 1,000 $0.5310
  • 2,000 $0.4735
$0.4735 / $0.5310 Buy Now
DISTI # 69781243
Verical Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2331 Americas - 7000
  • 1,000 $0.4396
$0.4396 Buy Now
DISTI # 83147688
Verical Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 96 Package Multiple: 1 Date Code: 2349 Americas - 800
  • 96 $0.7604
  • 500 $0.6061
  • 1,000 $0.5889
$0.5889 / $0.7604 Buy Now

Part Details for ZXMN6A09GTA

ZXMN6A09GTA CAD Models

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ZXMN6A09GTA Part Data Attributes

ZXMN6A09GTA Zetex / Diodes Inc
Buy Now Datasheet
Compare Parts:
ZXMN6A09GTA Zetex / Diodes Inc Small Signal Field-Effect Transistor, 5.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ZETEX PLC
Package Description LOW PROFILE SOIC-4
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5.4 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

ZXMN6A09GTA Related Parts

ZXMN6A09GTA Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the ZXMN6A09GTA is a standard SOT23 package with a 1.3mm x 1.3mm pad size, 0.5mm lead pitch, and a thermal pad for heat dissipation.

  • To ensure proper biasing, connect the input pin to a voltage source through a resistor, and the output pin to a load resistor. The recommended bias voltage is between 2.7V to 5.5V, and the input voltage should be at least 1.5V higher than the output voltage.

  • The maximum power dissipation for the ZXMN6A09GTA is 1.4W at an ambient temperature of 25°C. However, it's recommended to derate the power dissipation to 1.1W for reliable operation.

  • The ZXMN6A09GTA is rated for operation up to 150°C junction temperature. However, it's recommended to derate the power dissipation and ensure proper heat sinking to prevent thermal runaway.

  • To protect the ZXMN6A09GTA from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays.

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