Part Details for ZXMN6A09GTA by Zetex / Diodes Inc
Results Overview of ZXMN6A09GTA by Zetex / Diodes Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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ZXMN6A09GTA Information
ZXMN6A09GTA by Zetex / Diodes Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN6A09GTA
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88774494
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Verical | Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2319 | Americas - 36000 |
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$0.4710 | Buy Now |
DISTI #
87732263
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Verical | Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2425 | Americas - 9000 |
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$0.4735 / $0.5310 | Buy Now |
DISTI #
69781243
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Verical | Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2331 | Americas - 7000 |
|
$0.4396 | Buy Now |
DISTI #
83147688
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Verical | Trans MOSFET N-CH 60V 5.4A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 96 Package Multiple: 1 Date Code: 2349 | Americas - 800 |
|
$0.5889 / $0.7604 | Buy Now |
Part Details for ZXMN6A09GTA
ZXMN6A09GTA CAD Models
ZXMN6A09GTA Part Data Attributes
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ZXMN6A09GTA
Zetex / Diodes Inc
Buy Now
Datasheet
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ZXMN6A09GTA
Zetex / Diodes Inc
Small Signal Field-Effect Transistor, 5.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | ZETEX PLC | |
Package Description | LOW PROFILE SOIC-4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 5.4 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
ZXMN6A09GTA Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the ZXMN6A09GTA is a standard SOT23 package with a 1.3mm x 1.3mm pad size, 0.5mm lead pitch, and a thermal pad for heat dissipation.
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To ensure proper biasing, connect the input pin to a voltage source through a resistor, and the output pin to a load resistor. The recommended bias voltage is between 2.7V to 5.5V, and the input voltage should be at least 1.5V higher than the output voltage.
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The maximum power dissipation for the ZXMN6A09GTA is 1.4W at an ambient temperature of 25°C. However, it's recommended to derate the power dissipation to 1.1W for reliable operation.
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The ZXMN6A09GTA is rated for operation up to 150°C junction temperature. However, it's recommended to derate the power dissipation and ensure proper heat sinking to prevent thermal runaway.
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To protect the ZXMN6A09GTA from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays.