Part Details for ZXMN6A08GTA by Zetex / Diodes Inc
Results Overview of ZXMN6A08GTA by Zetex / Diodes Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
ZXMN6A08GTA Information
ZXMN6A08GTA by Zetex / Diodes Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN6A08GTA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88814622
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Verical | Trans MOSFET N-CH 60V 3.8A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2320 | Americas - 8000 |
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$0.2429 | Buy Now |
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DISTI #
87740755
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Verical | Trans MOSFET N-CH 60V 3.8A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2507 | Americas - 1000 |
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$0.2502 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.8A I(D), 60V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA | 872 |
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$2.7900 / $5.5800 | Buy Now |
Part Details for ZXMN6A08GTA
ZXMN6A08GTA CAD Models
ZXMN6A08GTA Part Data Attributes
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ZXMN6A08GTA
Zetex / Diodes Inc
Buy Now
Datasheet
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Compare Parts:
ZXMN6A08GTA
Zetex / Diodes Inc
Power Field-Effect Transistor, 3.8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ZETEX PLC | |
| Package Description | TO-261AA, 4 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ZXMN6A08GTA
This table gives cross-reference parts and alternative options found for ZXMN6A08GTA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMN6A08GTA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ZXMN6A08GTC | Diodes Incorporated | Check for Price | Power Field-Effect Transistor, 3.8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | ZXMN6A08GTA vs ZXMN6A08GTC |
| ZXMN6A08GTC | Zetex / Diodes Inc | Check for Price | Power Field-Effect Transistor, 3.8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | ZXMN6A08GTA vs ZXMN6A08GTC |
ZXMN6A08GTA Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the ZXMN6A08GTA is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the voltage and current ratings. Additionally, ensure that the device is operated within the specified voltage and current ranges, and that the input and output pins are properly terminated to prevent oscillations and noise.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This can be achieved by using a thick copper layer, thermal vias, and a heat sink. Additionally, ensure that the device is mounted on a thermally conductive material, such as a metal core PCB or a heat sink, to dissipate heat efficiently.
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To handle ESD protection for the ZXMN6A08GTA, follow the recommended ESD handling procedures in the datasheet. This includes using ESD-safe equipment, such as ESD wrist straps and mats, and ensuring that the device is properly packaged and stored in ESD-safe containers. Additionally, consider using ESD protection devices, such as TVS diodes, to protect the device from electrostatic discharge.
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The ZXMN6A08GTA is manufactured by Zetex / Diodes Inc, which follows strict quality and reliability standards, including ISO 9001 and AEC-Q101. The device is also qualified to meet the requirements of various industry standards, such as automotive and industrial applications. For specific reliability and quality information, refer to the datasheet and the manufacturer's website.