Part Details for ZXMN6A08GTA by Diodes Incorporated
Results Overview of ZXMN6A08GTA by Diodes Incorporated
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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ZXMN6A08GTA Information
ZXMN6A08GTA by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN6A08GTA
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3943992RL
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Farnell | MOSFET, N-CH, 60V, 5.3A, SOT-223 RoHS: Compliant Min Qty: 100 Lead time: 11 Weeks, 1 Days Container: Reel | 845 |
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$0.3068 / $0.4589 | Buy Now |
DISTI #
3943992
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Farnell | MOSFET, N-CH, 60V, 5.3A, SOT-223 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Cut Tape | 845 |
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$0.3068 / $0.9824 | Buy Now |
DISTI #
ZXMN6A08GCT-ND
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DigiKey | MOSFET N-CH 60V 3.8A SOT223 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11646 In Stock |
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$0.2139 / $0.9100 | Buy Now |
DISTI #
ZXMN6A08GTA
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Avnet Americas | Power MOSFET, N Channel, 60 V, 5.3 A, 0.06 ohm, SOT-223, Surface Mount - Tape and Reel (Alt: ZXMN6A08GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 1000 |
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$0.1891 / $0.2010 | Buy Now |
DISTI #
522-ZXMN6A08GTA
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Mouser Electronics | MOSFETs 60V 3.8A N-Channel MOSFET RoHS: Compliant | 8714 |
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$0.2520 / $0.8900 | Buy Now |
DISTI #
E02:0323_01118782
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Arrow Electronics | Trans MOSFET N-CH 60V 3.8A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Date Code: 2507 | Europe - 1000 |
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$0.2524 / $0.2895 | Buy Now |
DISTI #
70438837
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RS | MOSFET N-Channel 60V 5.3A SOT223 Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.2400 | RFQ |
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Bristol Electronics | 2384 |
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RFQ | ||
DISTI #
ZXMN6A08GTA
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TME | Transistor: N-MOSFET, unipolar, 60V, 2.8A, 2W, SOT223 Min Qty: 1 | 0 |
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$0.3020 / $0.5620 | RFQ |
DISTI #
ZXMN6A08GTA
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IBS Electronics | ZXMN6A08GTA by DIODES INC. is an N-Channel 60V Power MOSFET with 0.08 Ohm Rds(on), ideal for surface mount applications in a SOT-223-3 package. Min Qty: 1000 Package Multiple: 1 | 0 |
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$0.3185 / $0.3380 | Buy Now |
Part Details for ZXMN6A08GTA
ZXMN6A08GTA CAD Models
ZXMN6A08GTA Part Data Attributes
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ZXMN6A08GTA
Diodes Incorporated
Buy Now
Datasheet
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ZXMN6A08GTA
Diodes Incorporated
Power Field-Effect Transistor, 3.8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | TO-261AA | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 3.8 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
ZXMN6A08GTA Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the ZXMN6A08GTA is -55°C to 150°C.
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Yes, the ZXMN6A08GTA is suitable for high-frequency switching applications due to its low capacitance and high switching speed.
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To minimize EMI, it is recommended to use a ground plane, keep the leads as short as possible, and use a shielded cable or a ferrite bead to filter out high-frequency noise.
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Yes, the ZXMN6A08GTA is AEC-Q101 qualified, making it suitable for use in automotive applications.
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The maximum power dissipation for the ZXMN6A08GTA is 2.5W.