Part Details for ZXMN2B03E6TA by Diodes Incorporated
Results Overview of ZXMN2B03E6TA by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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ZXMN2B03E6TA Information
ZXMN2B03E6TA by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZXMN2B03E6TA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK9164
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Newark | Mosfet, N-Ch, 20V, 4.3A, Sot-26 Rohs Compliant: Yes |Diodes Inc. ZXMN2B03E6TA RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2950 |
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$0.4860 / $0.9140 | Buy Now |
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DISTI #
ZXMN2B03E6CT-ND
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DigiKey | MOSFET N-CH 20V 4.3A SOT23-6 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3107 In Stock |
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$0.2561 / $1.1900 | Buy Now |
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DISTI #
ZXMN2B03E6TA
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Avnet Americas | Trans MOSFET N-CH 20V 5.4A 6-Pin SOT-23 T/R - Tape and Reel (Alt: ZXMN2B03E6TA) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 15000 Factory Stock |
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$0.2459 / $0.2510 | Buy Now |
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DISTI #
522-ZXMN2B03E6TA
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Mouser Electronics | MOSFETs 20V N-Ch 4.6 MOSFET w/low gate drive cap RoHS: Compliant | 5883 |
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$0.2700 / $0.9400 | Buy Now |
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DISTI #
ZXMN2B03E6TA
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IBS Electronics | ZXMN2B03E6TA by DIODES INC. is a 20V N-channel MOSFET with 0.04 Ohm Rds(on), SOT-23-6 package, ideal for efficient switching applications. Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.3835 / $0.3965 | Buy Now |
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DISTI #
ZXMN2B03E6TA
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Avnet Silica | Trans MOSFET NCH 20V 54A 6Pin SOT23 TR (Alt: ZXMN2B03E6TA) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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LCSC | 20V 5.4A 40m4.5V4.3A 1.1W 1V 1 N-channel SOT-23-6 MOSFETs ROHS | 89 |
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$0.6218 / $0.6580 | Buy Now |
Part Details for ZXMN2B03E6TA
ZXMN2B03E6TA CAD Models
ZXMN2B03E6TA Part Data Attributes
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ZXMN2B03E6TA
Diodes Incorporated
Buy Now
Datasheet
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ZXMN2B03E6TA
Diodes Incorporated
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | SOT-23 | |
| Package Description | SOT-23, 6 PIN | |
| Pin Count | 6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 26 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
ZXMN2B03E6TA Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the ZXMN2B03E6TA is -55°C to 150°C.
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Yes, the ZXMN2B03E6TA is suitable for high-frequency switching applications due to its low capacitance and fast switching times.
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To minimize EMI, it is recommended to use a ground plane under the device, keep the leads as short as possible, and use a shielded cable for the gate drive.
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Yes, the ZXMN2B03E6TA is suitable for high-reliability applications due to its robust design and manufacturing process, which ensures high reliability and long-term stability.
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The recommended gate drive voltage for the ZXMN2B03E6TA is between 4.5V and 15V, with a typical value of 10V.