Part Details for ZTX650 by Zetex / Diodes Inc
Results Overview of ZTX650 by Zetex / Diodes Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
ZTX650 Information
ZTX650 by Zetex / Diodes Inc is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ZTX650
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 500 |
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RFQ |
Part Details for ZTX650
ZTX650 CAD Models
ZTX650 Part Data Attributes
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ZTX650
Zetex / Diodes Inc
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Datasheet
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ZTX650
Zetex / Diodes Inc
Small Signal Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, E-LINE PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ZETEX PLC | |
| Package Description | E-LINE PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Base Capacitance-Max | 30 pF | |
| Collector-Emitter Voltage-Max | 45 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | R-PSIP-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | CECC | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 175 MHz | |
| VCEsat-Max | 0.5 V |
Alternate Parts for ZTX650
This table gives cross-reference parts and alternative options found for ZTX650. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZTX650, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ZTX650STOB | Zetex / Diodes Inc | Check for Price | Small Signal Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | ZTX650 vs ZTX650STOB |
| ZTX650STOA | Zetex / Diodes Inc | Check for Price | Small Signal Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | ZTX650 vs ZTX650STOA |
ZTX650 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the ZTX650 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and the maximum collector-emitter voltage (Vce). For the ZTX650, the maximum Tj is 150°C and the maximum Vce is 65V. Engineers should consult the datasheet and application notes for more information on SOA calculations.
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To ensure the ZTX650 is properly biased, engineers should follow the recommended biasing conditions outlined in the datasheet and application notes. This typically involves setting the base-emitter voltage (Vbe) and collector-emitter voltage (Vce) within the recommended ranges, and ensuring the device is operated within its specified current and power ratings. Additionally, engineers should consider the device's thermal characteristics and ensure adequate heat sinking to prevent overheating.
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The recommended PCB layout and thermal management for the ZTX650 involve following good design practices for high-power transistors. This includes using a thermally conductive PCB material, placing the device on a heat sink or thermal pad, and ensuring good airflow around the device. Engineers should also consider the device's thermal resistance (Rthja) and ensure that the PCB layout and thermal management system can effectively dissipate heat generated by the device.
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To protect the ZTX650 from electrostatic discharge (ESD), engineers should follow standard ESD protection practices, such as using ESD-sensitive handling and storage procedures, and incorporating ESD protection devices (such as TVS diodes or ESD protection arrays) into the circuit design. Additionally, engineers should ensure that the PCB layout and component placement minimize the risk of ESD damage.
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The reliability and lifespan expectations for the ZTX650 are dependent on various factors, including the device's operating conditions, environmental factors, and manufacturing quality. According to the datasheet, the ZTX650 has a typical lifespan of 100,000 hours at a junction temperature of 40°C. However, engineers should consult the datasheet and application notes for more information on reliability and lifespan, and consider performing their own reliability testing and analysis.