Part Details for VS-40MT120UHTAPBF by Vishay Intertechnologies
Results Overview of VS-40MT120UHTAPBF by Vishay Intertechnologies
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
VS-40MT120UHTAPBF Information
VS-40MT120UHTAPBF by Vishay Intertechnologies is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for VS-40MT120UHTAPBF
VS-40MT120UHTAPBF CAD Models
VS-40MT120UHTAPBF Part Data Attributes
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VS-40MT120UHTAPBF
Vishay Intertechnologies
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Datasheet
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VS-40MT120UHTAPBF
Vishay Intertechnologies
Insulated Gate Bipolar Transistor
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MODULE-12 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X12 | |
| Number of Elements | 2 | |
| Number of Terminals | 12 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 463 W | |
| Reference Standard | UL APPROVED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 4.91 V |
VS-40MT120UHTAPBF Frequently Asked Questions (FAQ)
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The recommended land pattern for the VS-40MT120UHTAPBF can be found in the Vishay Intertechnologies' application note AN483, which provides guidelines for surface mount assembly of Vishay's power MOSFETs.
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To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and avoiding excessive power dissipation. Additionally, consult Vishay's application notes and reliability reports for specific guidance.
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While the VS-40MT120UHTAPBF is a high-speed MOSFET, its suitability for high-frequency switching applications depends on the specific requirements. Consult Vishay's application notes and simulation models to determine the device's performance in your specific application.
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The maximum allowed voltage derating for the VS-40MT120UHTAPBF is typically 80% of the maximum rated voltage. However, this may vary depending on the specific application and operating conditions. Consult Vishay's application notes and reliability reports for specific guidance.
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To handle the VS-40MT120UHTAPBF's ESD sensitivity, follow proper ESD handling procedures, such as using ESD-protected workstations, wearing ESD-protective clothing, and using ESD-protected packaging and storage materials.