Datasheets
VB30200C-E3/4W by:

DIODE 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode

Part Details for VB30200C-E3/4W by Vishay Semiconductors

Results Overview of VB30200C-E3/4W by Vishay Semiconductors

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Applications Industrial Automation Electronic Manufacturing

VB30200C-E3/4W Information

VB30200C-E3/4W by Vishay Semiconductors is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for VB30200C-E3/4W

Part # Distributor Description Stock Price Buy
DISTI # VB30200C-E3/4WGI-ND
DigiKey DIODE ARR SCHOT 200V 15A TO263AB Min Qty: 1 Lead time: 17 Weeks Container: Tube 1154
In Stock
  • 1 $1.9800
  • 50 $1.0700
  • 100 $1.0408
  • 500 $1.0355
$1.0355 / $1.9800 Buy Now

Part Details for VB30200C-E3/4W

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VB30200C-E3/4W Part Data Attributes

VB30200C-E3/4W Vishay Semiconductors
Buy Now Datasheet
Compare Parts:
VB30200C-E3/4W Vishay Semiconductors DIODE 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SEMICONDUCTORS
Part Package Code D2PAK
Package Description R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE
Application EFFICIENCY
Case Connection ISOLATED
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.69 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 250 A
Number of Elements 2
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 15 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 200 V
Surface Mount YES
Technology SCHOTTKY
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30

Alternate Parts for VB30200C-E3/4W

This table gives cross-reference parts and alternative options found for VB30200C-E3/4W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VB30200C-E3/4W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
VB30200C-E3/4W Vishay Intertechnologies $1.8188 Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT PACKAGE-3 VB30200C-E3/4W vs VB30200C-E3/4W
VB30200C-E3/8W Vishay Semiconductors Check for Price DIODE 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode VB30200C-E3/4W vs VB30200C-E3/8W

VB30200C-E3/4W Related Parts

VB30200C-E3/4W Frequently Asked Questions (FAQ)

  • The recommended storage temperature range for VB30200C-E3/4W is -40°C to 125°C.

  • Yes, the VB30200C-E3/4W is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.

  • The maximum operating voltage for VB30200C-E3/4W is 100V.

  • Yes, the VB30200C-E3/4W is suitable for high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality construction and rigorous testing.

  • To prevent electrostatic discharge (ESD) damage, handle the VB30200C-E3/4W with ESD-protective equipment, such as wrist straps and mats, and follow proper ESD handling procedures.

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