Part Details for V54C3128164VCUI6H by ProMOS Technologies Inc
Results Overview of V54C3128164VCUI6H by ProMOS Technologies Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Entertainment and Gaming
V54C3128164VCUI6H Information
V54C3128164VCUI6H by ProMOS Technologies Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for V54C3128164VCUI6H
V54C3128164VCUI6H CAD Models
V54C3128164VCUI6H Part Data Attributes
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V54C3128164VCUI6H
ProMOS Technologies Inc
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Datasheet
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V54C3128164VCUI6H
ProMOS Technologies Inc
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PROMOS TECHNOLOGIES INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.38 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 105 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 8MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Current-Max | 0.13 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for V54C3128164VCUI6H
This table gives cross-reference parts and alternative options found for V54C3128164VCUI6H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V54C3128164VCUI6H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MT48LC8M16A2TG-75ES:G | Micron Technology Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | V54C3128164VCUI6H vs MT48LC8M16A2TG-75ES:G |
| HY57V281620ALT-KI | SK Hynix Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | V54C3128164VCUI6H vs HY57V281620ALT-KI |
| M2V28S40CTP-6 | Mitsubishi Electric | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | V54C3128164VCUI6H vs M2V28S40CTP-6 |
| V54C3128164VCT7PC | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | V54C3128164VCUI6H vs V54C3128164VCT7PC |
| HY57V281620HCST-6I | SK Hynix Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | V54C3128164VCUI6H vs HY57V281620HCST-6I |
| IS42S16800A-6T | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | V54C3128164VCUI6H vs IS42S16800A-6T |
| IS42SM16800E-6TLI | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | V54C3128164VCUI6H vs IS42SM16800E-6TLI |
| IC42S16800-7TI | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | V54C3128164VCUI6H vs IC42S16800-7TI |
| MD56V72160B-6TAZ03 | LAPIS Semiconductor Co Ltd | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54 | V54C3128164VCUI6H vs MD56V72160B-6TAZ03 |
| IS42SM16800E-75ETLI | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 | V54C3128164VCUI6H vs IS42SM16800E-75ETLI |