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Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
US1MHE3/61T by Vishay Intertechnologies is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
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US1MHE3/61T
Vishay Intertechnologies
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Datasheet
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US1MHE3/61T
Vishay Intertechnologies
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | DO-214AC | |
Package Description | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN | |
Pin Count | 2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | FREE WHEELING DIODE | |
Application | GENERAL PURPOSE | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.7 V | |
JEDEC-95 Code | DO-214AC | |
JESD-30 Code | R-PDSO-C2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Pk Forward Current-Max | 30 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 1 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 1000 V | |
Reverse Recovery Time-Max | 0.075 µs | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 |
This table gives cross-reference parts and alternative options found for US1MHE3/61T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of US1MHE3/61T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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HS1M | Yangzhou Yangjie Electronics Co Ltd | $0.0333 | Rectifier Diode, 1 Element, 1A, 1000V V(RRM) | US1MHE3/61T vs HS1M |
ES1ME3 | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, PLASTIC, HSMA, 2 PIN | US1MHE3/61T vs ES1ME3 |
US1M_R2_00001 | PanJit Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN | US1MHE3/61T vs US1M_R2_00001 |
US1M | Diodes Incorporated | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, SMA, 2 PIN | US1MHE3/61T vs US1M |
US1M | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN | US1MHE3/61T vs US1M |
US1MR3 | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN | US1MHE3/61T vs US1MR3 |
US1ME2G | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, CLIP SMA, 2 PIN | US1MHE3/61T vs US1ME2G |
US1M | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM) | US1MHE3/61T vs US1M |
HS1MR3G | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN | US1MHE3/61T vs HS1MR3G |
US1M/1 | Vishay Semiconductors | Check for Price | US1M/1 | US1MHE3/61T vs US1M/1 |
The recommended land pattern for the US1MHE3/61T is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.2 mm solder mask clearance.
Yes, the US1MHE3/61T is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the component is properly derated and that the application meets the specified thermal requirements.
To prevent damage, handle the US1MHE3/61T by the body only, avoiding touching the leads or the glass passivation. Use anti-static wrist straps, mats, or other ESD protection methods to prevent electrostatic discharge damage.
The recommended soldering profile for the US1MHE3/61T is a peak temperature of 260°C, with a dwell time of 10-30 seconds above 220°C. Ensure that the soldering process meets the IPC J-STD-020 standard.
Yes, the US1MHE3/61T is designed to operate in humid environments, with a moisture sensitivity level (MSL) of 1. However, it's essential to follow proper storage and handling procedures to prevent moisture absorption.