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Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
US1G-M3/5AT by Vishay Intertechnologies is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
53T3638
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Newark | 1A, 400V, 50Ns, Sma, Uf Rect, Smd |Vishay US1G-M3/5AT RoHS: Not Compliant Min Qty: 15000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0720 / $0.0940 | Buy Now |
DISTI #
US1G-M3/5AT
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Avnet Americas | 1A, 400V, 50NS, SMA, UF RECT, SMD - Tape and Reel (Alt: US1G-M3/5AT) RoHS: Compliant Min Qty: 15000 Package Multiple: 7500 Lead time: 5 Weeks, 0 Days Container: Reel | 0 |
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$0.0605 / $0.0637 | Buy Now |
DISTI #
78-US1G-M35AT
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Mouser Electronics | Rectifiers 1A,400V,50NS,UF RECT,SMD RoHS: Compliant | 22372 |
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$0.0630 / $0.3100 | Buy Now |
DISTI #
US1G-M3/5AT
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TTI | Rectifiers 1A,400V,50NS,UF RECT,SMD RoHS: Compliant pbFree: Pb-Free Min Qty: 15000 Package Multiple: 7500 Container: Reel | Americas - 0 |
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$0.0830 / $0.0900 | Buy Now |
DISTI #
US1G-M3/5AT
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EBV Elektronik | 1A 400V 50NS SMA UF RECT SMD (Alt: US1G-M3/5AT) RoHS: Compliant Min Qty: 7500 Package Multiple: 7500 Lead time: 6 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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US1G-M3/5AT
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
US1G-M3/5AT
Vishay Intertechnologies
Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMA, 2 PIN | |
Reach Compliance Code | compliant | |
Factory Lead Time | 5 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | FREE WHEELING DIODE | |
Application | EFFICIENCY | |
Breakdown Voltage-Min | 400 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1 V | |
JEDEC-95 Code | DO-214AC | |
JESD-30 Code | R-PDSO-C2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Pk Forward Current-Max | 30 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 1 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Rep Pk Reverse Voltage-Max | 400 V | |
Reverse Current-Max | 10 µA | |
Reverse Recovery Time-Max | 0.05 µs | |
Reverse Test Voltage | 400 V | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 |
This table gives cross-reference parts and alternative options found for US1G-M3/5AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of US1G-M3/5AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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US1G-E3/61T | Vishay Intertechnologies | $0.1790 | Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA, 2 PIN | US1G-M3/5AT vs US1G-E3/61T |
HS1FF4G | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, FOLDED SMA, 2 PIN | US1G-M3/5AT vs HS1FF4G |
US1G | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM) | US1G-M3/5AT vs US1G |
HS1FE3 | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN | US1G-M3/5AT vs HS1FE3 |
US1GR2G | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN | US1G-M3/5AT vs US1GR2G |
US1GE2 | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN | US1G-M3/5AT vs US1GE2 |
ES1G_R1_10001 | PanJit Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN | US1G-M3/5AT vs ES1G_R1_10001 |
FS4 | Gulfsemi | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN | US1G-M3/5AT vs FS4 |
US1G | Diodes Incorporated | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, SMA, 2 PIN | US1G-M3/5AT vs US1G |
HS1FF2G | Taiwan Semiconductor | Check for Price | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, GREEN, PLASTIC, FOLDED SMA, 2 PIN | US1G-M3/5AT vs HS1FF2G |
The recommended soldering temperature is 260°C (500°F) with a maximum soldering time of 10 seconds. It's essential to follow the recommended soldering profile to prevent damage to the component.
While the US1G-M3/5AT is suitable for high-frequency applications, its performance may degrade above 100 MHz due to internal lead inductance and capacitance. For high-frequency applications, consider using a more suitable component or evaluating the device's performance through simulation and testing.
The US1G-M3/5AT is a moisture-sensitive device. To prevent damage, store the components in a dry environment (less than 30% relative humidity) and follow the recommended baking and soldering procedures to minimize moisture absorption.
The maximum allowable voltage derating for the US1G-M3/5AT is 80% of the rated voltage. Exceeding this derating may reduce the component's lifespan or cause premature failure.
The US1G-M3/5AT is rated for operation up to 150°C (302°F). However, the component's performance and lifespan may degrade at high temperatures. Consider using a more suitable component or evaluating the device's performance through simulation and testing for high-temperature applications.