Part Details for UPA2803T1L-E2-AY by Renesas Electronics Corporation
Results Overview of UPA2803T1L-E2-AY by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
UPA2803T1L-E2-AY Information
UPA2803T1L-E2-AY by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for UPA2803T1L-E2-AY
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86153112
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Verical | Trans MOSFET N-CH 20V 20A T/R Min Qty: 198 Package Multiple: 1 Date Code: 1401 | Americas - 9000 |
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$1.1760 / $1.9000 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 20A, 20V, N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 9000 |
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$0.9408 / $1.5200 | Buy Now |
Part Details for UPA2803T1L-E2-AY
UPA2803T1L-E2-AY CAD Models
UPA2803T1L-E2-AY Part Data Attributes
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UPA2803T1L-E2-AY
Renesas Electronics Corporation
Buy Now
Datasheet
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UPA2803T1L-E2-AY
Renesas Electronics Corporation
Switching N-Channel Power MOSFET, HVSON, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | HVSON | |
| Package Description | ROHS COMPLIANT, HVSON-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | PVSN0008JD | |
| Reach Compliance Code | unknown | |
| ECCN Code | 5A002 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.8 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |