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Part Details for TN2106N3-G by Microchip Technology Inc
Results Overview of TN2106N3-G by Microchip Technology Inc
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
TN2106N3-G Information
TN2106N3-G by Microchip Technology Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TN2106N3-G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
53Y4243
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Newark | Mosfet, N-Ch, 100V, 1.2A, To-92, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:0.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Microchip TN2106N3-G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 996 |
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$0.5200 / $0.5800 | Buy Now |
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DISTI #
57AC4021
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Newark | Mosfet, N-Ch, 60V, 0.3A, To-226Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:300Ma, Drain Source Voltage Vds:60V, On Resistance Rds(On):2.5Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Microchip TN2106N3-G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.5410 / $0.7070 | Buy Now |
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DISTI #
TN2106N3-G-ND
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DigiKey | MOSFET N-CH 60V 300MA TO92-3 Min Qty: 1 Lead time: 7 Weeks Container: Bag |
998 In Stock |
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$0.5200 / $0.6800 | Buy Now |
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DISTI #
53Y4243
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Avnet Americas | Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Bag - Bulk (Alt: 53Y4243) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Bulk | 996 Partner Stock |
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$0.5410 / $0.7070 | Buy Now |
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DISTI #
TN2106N3-G
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Avnet Americas | Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Bag - Bag (Alt: TN2106N3-G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 7 Weeks, 0 Days Container: Bag | 0 |
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$0.2925 / $0.3125 | Buy Now |
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DISTI #
689-TN2106N3-G
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Mouser Electronics | MOSFETs 60V 2.5Ohm RoHS: Compliant | 1670 |
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$0.5200 / $0.6800 | Buy Now |
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DISTI #
V99:2348_06515658
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Arrow Electronics | Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks Date Code: 2110 | Americas - 241 |
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$0.3173 | Buy Now |
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DISTI #
TN2106N3-G
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Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 2.5 Ohm, TO-92, Projected EOL: 2034-09-01 COO: Philippines, Taiwan ECCN: EAR99 RoHS: Compliant Lead time: 7 Weeks, 0 Days Container: Bag |
5780 Alternates Available |
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$0.3800 / $0.6800 | Buy Now |
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DISTI #
70452245
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RS | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 2.5 Ohm3 TO-92 BAG Min Qty: 1000 Package Multiple: 1 Lead time: 52 Weeks, 0 Days Container: Bulk | 0 |
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$0.6500 | RFQ |
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Onlinecomponents.com | MOSFET Transistor - N Channel - 300 mA - 60 V - 2.5 ohm - TO-92-3. RoHS: Compliant |
1800 In Stock 5000 Factory Stock |
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$0.4947 / $0.5520 | Buy Now |
Part Details for TN2106N3-G
TN2106N3-G CAD Models
TN2106N3-G Part Data Attributes
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TN2106N3-G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
TN2106N3-G
Microchip Technology Inc
300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 17 Weeks, 4 Days | |
| Samacsys Manufacturer | Microchip | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.74 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TN2106N3-G
This table gives cross-reference parts and alternative options found for TN2106N3-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TN2106N3-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TN2106N3-G | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN | TN2106N3-G vs TN2106N3-G |
TN2106N3-G Frequently Asked Questions (FAQ)
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For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer. This helps to dissipate heat efficiently. Additionally, placing thermal vias under the IC can improve heat dissipation.
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To ensure reliable operation across the entire operating temperature range, it is essential to follow proper PCB design and layout guidelines, use a suitable thermal interface material, and ensure adequate heat sinking. Additionally, consider using a thermistor or thermocouple to monitor the device temperature and implement thermal protection mechanisms if necessary.
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For EMI and EMC compliance, it is crucial to follow proper PCB design and layout guidelines, use a shielded enclosure, and ensure proper grounding and shielding of cables. Additionally, consider using EMI filters or common-mode chokes to reduce electromagnetic interference.
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To troubleshoot issues related to the internal oscillator, check the oscillator circuitry for proper component values and PCB layout. Ensure that the oscillator pins are not loaded excessively, and the oscillator circuit is properly decoupled. If issues persist, consider using an external oscillator or clock source.
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To prevent damage, store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to extreme temperatures, humidity, or physical stress. Handle the devices by the body or leads, and avoid touching the pins or die to prevent ESD damage.