Datasheets
TN0200K-T1-E3 by:

Power Field-Effect Transistor, 0.73A I(D), 20V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3

Part Details for TN0200K-T1-E3 by Vishay Intertechnologies

Results Overview of TN0200K-T1-E3 by Vishay Intertechnologies

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TN0200K-T1-E3 Information

TN0200K-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

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DP83630SQX/NOPB Texas Instruments IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85
DP83620SQE/NOPB Texas Instruments Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85
DS100BR111ASQE/NOPB Texas Instruments DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85

Price & Stock for TN0200K-T1-E3

Part # Distributor Description Stock Price Buy
Bristol Electronics   522
RFQ
DISTI # TN0200K-T1-E3
EBV Elektronik Trans MOSFET NCH 20V 073A 3Pin TO236 TR (Alt: TN0200K-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 1108
RFQ

Part Details for TN0200K-T1-E3

TN0200K-T1-E3 CAD Models

TN0200K-T1-E3 Part Data Attributes

TN0200K-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
TN0200K-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 0.73A I(D), 20V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT PACKAGE-3
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.73 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TN0200K-T1-E3

This table gives cross-reference parts and alternative options found for TN0200K-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TN0200K-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TN0200T-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.73A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3 TN0200K-T1-E3 vs TN0200T-E3
Part Number Manufacturer Composite Price Description Compare
TN0200TT2 Temic Semiconductors Check for Price Small Signal Field-Effect Transistor, 0.73A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TN0200K-T1-E3 vs TN0200TT2
TN0200TT1 Temic Semiconductors Check for Price Small Signal Field-Effect Transistor, 0.73A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TN0200K-T1-E3 vs TN0200TT1
TN0200T Vishay Semiconductors Check for Price Small Signal Field-Effect Transistor, 0.73A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB TN0200K-T1-E3 vs TN0200T
TN0200T-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.73A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN TN0200K-T1-E3 vs TN0200T-T1

TN0200K-T1-E3 Related Parts

TN0200K-T1-E3 Frequently Asked Questions (FAQ)

  • The recommended soldering temperature profile for TN0200K-T1-E3 is 260°C for 10 seconds, with a peak temperature of 240°C. However, it's essential to consult the datasheet and follow the manufacturer's guidelines for specific soldering requirements.

  • While TN0200K-T1-E3 is a general-purpose resistor, it's not optimized for high-frequency applications. For high-frequency use cases, consider using specialized resistors designed for high-frequency performance, such as those with low inductance and capacitance.

  • TN0200K-T1-E3 has a maximum operating temperature of 155°C. While it can tolerate high temperatures, its performance may degrade above 125°C. For extreme temperature applications, consider using resistors with higher temperature ratings, such as those with a 200°C or higher rating.

  • While TN0200K-T1-E3 meets the requirements for many industrial applications, it may not meet the specific requirements for automotive applications, such as AEC-Q200 certification. For automotive applications, consider using resistors that meet the necessary automotive standards and certifications.

  • TN0200K-T1-E3 has a power rating of 0.25 W. While it can handle moderate power levels, it's not suitable for high-power applications. For high-power use cases, consider using resistors with higher power ratings, such as 1 W or higher.

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