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X35 PB-F POWER MOSFET TRANSISTOR
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
TK4R3E06PL,S1X by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK4R3E06PLS1X-ND
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DigiKey | MOSFET N-CH 60V 80A TO220 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
59 In Stock |
|
$0.6953 / $2.0700 | Buy Now |
DISTI #
TK4R3E06PL,S1X
|
Avnet Americas | - Rail/Tube (Alt: TK4R3E06PL,S1X) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$0.6005 / $0.6438 | Buy Now |
DISTI #
757-TK4R3E06PLS1X
|
Mouser Electronics | MOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W RoHS: Compliant | 5864 |
|
$0.7210 / $2.0100 | Buy Now |
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TK4R3E06PL,S1X
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK4R3E06PL,S1X
Toshiba America Electronic Components
X35 PB-F POWER MOSFET TRANSISTOR
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | unknown | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 29 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0043 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 60 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 87 W | |
Pulsed Drain Current-Max (IDM) | 350 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Toshiba recommends following the recommended PCB layout and thermal management guidelines provided in the application note or design guide for the TK4R3E06PL,S1X. This typically includes using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good airflow around the component.
Consult the datasheet and application note for specific biasing and configuration recommendations. Additionally, Toshiba provides evaluation boards and design support tools to help engineers optimize their design and ensure proper configuration.
Toshiba provides reliability and quality metrics for the TK4R3E06PL,S1X in the datasheet and quality/reliability reports. The device meets industry standards such as AEC-Q101 and IEC 60747 for automotive and industrial applications, respectively.
The TK4R3E06PL,S1X is rated for operation up to 150°C. Derating factors for temperature, voltage, and current are provided in the datasheet. Engineers should consult the datasheet and application note for specific guidance on using the device in high-temperature environments.
Toshiba recommends following standard ESD and moisture-sensitive device handling procedures to prevent damage. Store the devices in their original packaging, away from direct sunlight and moisture, and handle them with anti-static wrist straps and mats.