Datasheets
TK4R3E06PL,S1X by: Toshiba America Electronic Components

X35 PB-F POWER MOSFET TRANSISTOR

Part Details for TK4R3E06PL,S1X by Toshiba America Electronic Components

Results Overview of TK4R3E06PL,S1X by Toshiba America Electronic Components

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TK4R3E06PL,S1X Information

TK4R3E06PL,S1X by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for TK4R3E06PL,S1X

Part # Distributor Description Stock Price Buy
DISTI # TK4R3E06PLS1X-ND
DigiKey MOSFET N-CH 60V 80A TO220 Min Qty: 1 Lead time: 16 Weeks Container: Tube 59
In Stock
  • 1 $2.0700
  • 50 $1.1384
  • 100 $1.0388
  • 500 $0.8436
  • 1,000 $0.7532
  • 2,000 $0.7142
  • 5,000 $0.6953
$0.6953 / $2.0700 Buy Now
DISTI # TK4R3E06PL,S1X
Avnet Americas - Rail/Tube (Alt: TK4R3E06PL,S1X) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 50 $0.6438
  • 100 $0.6330
  • 200 $0.6221
  • 300 $0.6113
  • 400 $0.6005
$0.6005 / $0.6438 Buy Now
DISTI # 757-TK4R3E06PLS1X
Mouser Electronics MOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W RoHS: Compliant 5864
  • 1 $2.0100
  • 10 $1.9000
  • 50 $1.1300
  • 100 $1.0600
  • 500 $0.8920
  • 1,000 $0.7640
  • 2,500 $0.7290
  • 5,000 $0.7210
$0.7210 / $2.0100 Buy Now

Part Details for TK4R3E06PL,S1X

TK4R3E06PL,S1X CAD Models

TK4R3E06PL,S1X Part Data Attributes

TK4R3E06PL,S1X Toshiba America Electronic Components
Buy Now Datasheet
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TK4R3E06PL,S1X Toshiba America Electronic Components X35 PB-F POWER MOSFET TRANSISTOR
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description TO-220, 3 PIN
Reach Compliance Code unknown
Factory Lead Time 16 Weeks
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 29 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 60 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 87 W
Pulsed Drain Current-Max (IDM) 350 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

TK4R3E06PL,S1X Frequently Asked Questions (FAQ)

  • Toshiba recommends following the recommended PCB layout and thermal management guidelines provided in the application note or design guide for the TK4R3E06PL,S1X. This typically includes using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good airflow around the component.

  • Consult the datasheet and application note for specific biasing and configuration recommendations. Additionally, Toshiba provides evaluation boards and design support tools to help engineers optimize their design and ensure proper configuration.

  • Toshiba provides reliability and quality metrics for the TK4R3E06PL,S1X in the datasheet and quality/reliability reports. The device meets industry standards such as AEC-Q101 and IEC 60747 for automotive and industrial applications, respectively.

  • The TK4R3E06PL,S1X is rated for operation up to 150°C. Derating factors for temperature, voltage, and current are provided in the datasheet. Engineers should consult the datasheet and application note for specific guidance on using the device in high-temperature environments.

  • Toshiba recommends following standard ESD and moisture-sensitive device handling procedures to prevent damage. Store the devices in their original packaging, away from direct sunlight and moisture, and handle them with anti-static wrist straps and mats.

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