-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for TK35E08N1 by Toshiba America Electronic Components
Results Overview of TK35E08N1 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
TK35E08N1 Information
TK35E08N1 by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TK35E08N1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
TK35E08N1
|
TME | Transistor: N-MOSFET, unipolar, 80V, 55A, 72W, TO220-3 Min Qty: 1 | 77 |
|
$0.5540 / $0.9340 | Buy Now |
Part Details for TK35E08N1
TK35E08N1 CAD Models
TK35E08N1 Part Data Attributes
|
|
TK35E08N1
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TK35E08N1
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 38 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.0122 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 72 W | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
TK35E08N1 Frequently Asked Questions (FAQ)
-
Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
-
Ensure proper heat sinking, use a thermal interface material, and follow the recommended operating temperature range (up to 150°C) to ensure reliable operation.
-
The maximum allowed voltage transient on the input pins is ±20V, but it's recommended to limit transients to ±10V to ensure device reliability.
-
Yes, the TK35E08N1 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize EMI and noise.
-
Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to prevent damage from electrostatic discharge.