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Part Details for TK31V60W5 by Toshiba America Electronic Components
Results Overview of TK31V60W5 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
TK31V60W5 Information
TK31V60W5 by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TK31V60W5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK31V60W5
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TME | Transistor: N-MOSFET, unipolar, 600V, 30.8A, 240W, DFN, 8x8mm Min Qty: 1 | 0 |
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$2.9900 / $4.0300 | RFQ |
Part Details for TK31V60W5
TK31V60W5 CAD Models
TK31V60W5 Part Data Attributes
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TK31V60W5
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK31V60W5
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, S-PSSO-N4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 338 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 30.8 A | |
| Drain-source On Resistance-Max | 0.109 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PSSO-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 123 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK31V60W5
This table gives cross-reference parts and alternative options found for TK31V60W5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK31V60W5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP34NM60ND | STMicroelectronics | $3.8255 | N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-220 | TK31V60W5 vs STP34NM60ND |
TK31V60W5 Frequently Asked Questions (FAQ)
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Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure proper heat sinking, and consider using a thermal interface material (TIM) to reduce thermal resistance.
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Although not explicitly stated in the datasheet, Toshiba recommends limiting voltage transients to ±10% of the maximum rated voltage to prevent damage to the device.
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Yes, the TK31V60W5 can be used in a parallel configuration to increase current capability. However, it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal differences between devices.
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Toshiba recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure optimal switching performance and minimize switching losses.