Part Details for TK13A60D by Toshiba America Electronic Components
Results Overview of TK13A60D by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
TK13A60D Information
TK13A60D by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TK13A60D
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3150 |
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RFQ | ||
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Quest Components | 2520 |
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$2.0160 / $4.0320 | Buy Now |
Part Details for TK13A60D
TK13A60D CAD Models
TK13A60D Part Data Attributes
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TK13A60D
Toshiba America Electronic Components
Buy Now
Datasheet
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TK13A60D
Toshiba America Electronic Components
TRANSISTOR 13 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-67 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 511 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.43 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
TK13A60D Frequently Asked Questions (FAQ)
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Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
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The TK13A60D requires a bias voltage of 15V to 20V on the gate pin, and a current limit resistor to prevent excessive current. A gate resistor of 1kΩ to 10kΩ is recommended.
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The maximum allowable power dissipation for the TK13A60D is 125W, but this can be increased to 150W with proper heat sinking and thermal management.
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Yes, the TK13A60D is suitable for high-frequency switching applications up to 100kHz, but the user must ensure that the device is properly snubbed to prevent voltage ringing and oscillation.
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Toshiba recommends using a voltage clamp or TVS diode to protect the device from overvoltage conditions, and a current sense resistor with a fuse or circuit breaker to protect against overcurrent conditions.