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10 A, 100 V PNP Darlington Bipolar Power Transistor, TO-247, 30-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
TIP147G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82Y7303
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Newark | Transistor, Bipol, Pnp, 100V, To-247-3, Transistor Polarity:Pnp, Collector Emitter Voltage V(Br)Ceo:-100V, Transition Frequency Ft:-, Power Dissipation Pd:125W, Dc Collector Current:-10A, Dc Current Gain Hfe:500Hfe, Transistor Case Rohs Compliant: Yes |Onsemi TIP147G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 84 |
|
$2.2300 / $4.0400 | Buy Now |
DISTI #
TIP147GOS-ND
|
DigiKey | TRANS PNP DARL 100V 10A TO-247-3 Min Qty: 1 Lead time: 13 Weeks Container: Tube |
819 In Stock |
|
$1.3034 / $3.8900 | Buy Now |
DISTI #
TIP147G
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Avnet Americas | Darlington Transistor, PNP, 100 V, 125 W, 10 A, TO-247, 3 Pins - Rail/Tube (Alt: TIP147G) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 120 |
|
$1.1586 / $1.3368 | Buy Now |
DISTI #
863-TIP147G
|
Mouser Electronics | Darlington Transistors BIP PNP 10A 100V RoHS: Compliant | 854 |
|
$1.3000 / $3.3400 | Buy Now |
|
Onlinecomponents.com | Trans Darlington PNP 100V 10A 3-Pin(3+Tab) SOT-93 Rail RoHS: Compliant |
510 In Stock |
|
$1.2600 / $2.0300 | Buy Now |
DISTI #
83629324
|
Verical | Trans Darlington PNP 100V 10A 125000mW 3-Pin(3+Tab) TO-247 Rail RoHS: Compliant Min Qty: 60 Package Multiple: 30 Date Code: 2427 | Americas - 510 |
|
$1.6770 / $2.0280 | Buy Now |
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Bristol Electronics | 3 |
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RFQ | ||
|
Quest Components | POWER BIPOLAR TRANSISTOR, 10A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-247, PLASTIC/EPOXY, 3 PIN | 36 |
|
$4.5000 / $6.7500 | Buy Now |
|
Rochester Electronics | TIP147 - 10 A, 100 V PNP Darlington Bipolar Power Transistor RoHS: Not Compliant Status: Active Min Qty: 1 | 95 |
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$1.0900 / $1.3600 | Buy Now |
DISTI #
TIP147G
|
TME | Transistor: PNP, bipolar, Darlington, 100V, 10A, 125W, TO247-3 Min Qty: 1 | 432 |
|
$1.6100 / $2.3500 | Buy Now |
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TIP147G
onsemi
Buy Now
Datasheet
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TIP147G
onsemi
10 A, 100 V PNP Darlington Bipolar Power Transistor, TO-247, 30-TUBE
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-247 | |
Package Description | LEAD FREE, CASE 340D-02, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 340L | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 500 | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz |
This table gives cross-reference parts and alternative options found for TIP147G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TIP147G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
TIP147T | Continental Device India Ltd | $0.3872 | Power Bipolar Transistor, 10A I(C), PNP | TIP147G vs TIP147T |
TIP147T | STMicroelectronics | $0.8731 | Low voltage PNP power Darlington transistor | TIP147G vs TIP147T |
TIP147T | Mospec Semiconductor Corp | Check for Price | Power Bipolar Transistor, 10A I(C), PNP | TIP147G vs TIP147T |
TIP147T | Baneasa SA | Check for Price | Power Bipolar Transistor, 15A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | TIP147G vs TIP147T |
TIP147T | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | TIP147G vs TIP147T |
TIP147T | Fairchild Semiconductor Corporation | Check for Price | PNP Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1200/BULK | TIP147G vs TIP147T |
TIP147TLEADFREE | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | TIP147G vs TIP147TLEADFREE |
The maximum collector current for each Darlington pair is 1 A, but this can be increased by paralleling multiple pairs.
To ensure stable operation, it's essential to use a bypass capacitor (e.g., 10 nF to 100 nF) between the emitter and collector of each Darlington pair, and to minimize lead lengths and stray inductance.
The recommended base resistor value depends on the application, but a typical value is 1 kΩ to 4.7 kΩ. A higher value can help reduce power consumption, but may affect switching speed.
Yes, the TIP147G can be used to drive inductive loads, but it's essential to add a freewheeling diode (e.g., 1N4001-1N4007) across the load to protect the transistor from back-EMF.
To prevent overheating, ensure good heat sinking (e.g., using a heat sink with a thermal resistance of 10°C/W or lower), and consider adding thermal monitoring or shutdown circuitry if the device will be operating near its maximum power rating.