Datasheets
TIP142 by:

Power Bipolar Transistor,

Part Details for TIP142 by NTE Electronics Inc

Results Overview of TIP142 by NTE Electronics Inc

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Applications Industrial Automation Motor control systems

TIP142 Information

TIP142 by NTE Electronics Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for TIP142

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TIP142 Part Data Attributes

TIP142 NTE Electronics Inc
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TIP142 NTE Electronics Inc Power Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NTE ELECTRONICS INC
Reach Compliance Code unknown
ECCN Code EAR99
Date Of Intro 2018-07-19
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 500
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 125 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
VCEsat-Max 3 V

TIP142 Related Parts

TIP142 Frequently Asked Questions (FAQ)

  • The maximum collector current for each transistor in the TIP142 array is 1A.

  • Yes, the TIP142 can be used as a switch for high-voltage applications up to 100V, but ensure that the collector-emitter voltage (Vce) and collector-base voltage (Vcb) ratings are not exceeded.

  • To calculate the power dissipation of the TIP142, use the formula: Pd = (Vce x Ic) + (Vbe x Ib), where Pd is the power dissipation, Vce is the collector-emitter voltage, Ic is the collector current, Vbe is the base-emitter voltage, and Ib is the base current.

  • The minimum base current required to turn on the transistor in the TIP142 array is typically around 1-2mA, but this can vary depending on the specific application and operating conditions.

  • The TIP142 is not suitable for high-frequency switching applications due to its relatively slow switching times (turn-on time: 2us, turn-off time: 3us). For high-frequency applications, consider using a faster switching transistor or a dedicated high-frequency transistor array.

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