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5.0 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220-3, 1200-BLKBG
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
TIP122 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 500 |
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RFQ | ||
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Bristol Electronics | 19 |
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RFQ | ||
DISTI #
TIP122
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EBV Elektronik | Transistor Darlington NPN 100V 5A 3Pin TO220AB Bulk (Alt: TIP122) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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TIP122
onsemi
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Datasheet
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TIP122
onsemi
5.0 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220-3, 1200-BLKBG
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-220-3 | |
Package Description | PLASTIC, CASE 221A-09, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 5 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 1000 | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 65 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz |
This table gives cross-reference parts and alternative options found for TIP122. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TIP122, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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TIP122 | Baneasa SA | Check for Price | Power Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | TIP122 vs TIP122 |
TIP122 | Comset Semiconductor | Check for Price | Transistor | TIP122 vs TIP122 |
TIP122 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | TIP122 vs TIP122 |
TIP122 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | TIP122 vs TIP122 |
TIP122-BP | Micro Commercial Components | Check for Price | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | TIP122 vs TIP122-BP |
The maximum collector-emitter voltage (Vce) for the TIP122 is 100V. Exceeding this voltage may damage the transistor.
The power dissipation of the TIP122 can be calculated using the formula: Pd = Vce x Ic, where Vce is the collector-emitter voltage and Ic is the collector current. Make sure to stay within the maximum power dissipation rating of 65W.
The minimum base current required to fully saturate the TIP122 depends on the collector current. A general rule of thumb is to use a base current of at least 1/10th of the collector current. For example, if the collector current is 5A, the base current should be at least 500mA.
The TIP122 is not suitable for high-frequency switching applications due to its relatively slow switching times (turn-on time: 3us, turn-off time: 10us). It's better suited for low-frequency switching or linear amplifier applications.
To protect the TIP122 from overheating, ensure good heat sinking, use a heat sink with a thermal resistance of 5°C/W or less, and keep the ambient temperature below 25°C. Also, avoid exceeding the maximum power dissipation rating.