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Part Details for TH58NVG4S0FBAID by Toshiba America Electronic Components
Results Overview of TH58NVG4S0FBAID by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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TH58NVG4S0FBAID Information
TH58NVG4S0FBAID by Toshiba America Electronic Components is an EEPROM.
EEPROMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for TH58NVG4S0FBAID
TH58NVG4S0FBAID CAD Models
TH58NVG4S0FBAID Part Data Attributes
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TH58NVG4S0FBAID
Toshiba America Electronic Components
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Datasheet
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TH58NVG4S0FBAID
Toshiba America Electronic Components
16GB SLC NAND BGA 32NM LB 10X11 (EEPROM)
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | TFBGA-63 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | Toshiba | |
| JESD-30 Code | R-PBGA-B63 | |
| Length | 11 mm | |
| Memory Density | 17179869184 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Terminals | 63 | |
| Number of Words | 2147483648 words | |
| Number of Words Code | 2000000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 2GX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA63,10X12,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Parallel/Serial | SERIAL | |
| Programming Voltage | 3.3 V | |
| Seated Height-Max | 1 mm | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Type | SLC NAND TYPE | |
| Width | 9 mm | |
| Write Protection | HARDWARE |
TH58NVG4S0FBAID Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the TH58NVG4S0FBAID is -40°C to 85°C.
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The TH58NVG4S0FBAID has a built-in bad block management system. The device automatically detects and replaces bad blocks with spare blocks. However, it is recommended to implement additional error correction and bad block management mechanisms in the system design to ensure data integrity.
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The TH58NVG4S0FBAID has a maximum of 3,000 program/erase cycles per block. It is recommended to implement wear leveling and garbage collection mechanisms to ensure even wear and extend the lifespan of the device.
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The TH58NVG4S0FBAID supports secure erase through the use of the SECURE ERASE command. This command erases all data in the device and sets all bytes to 0xFF. It is recommended to use this command in conjunction with other security measures, such as encryption and access controls, to ensure data security.
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The typical power consumption for the TH58NVG4S0FBAID is 50mA active read current, 30mA active write current, and 10mA standby current. However, actual power consumption may vary depending on the system design and operating conditions.