Datasheets
TH58BYG3S0HBAI6 by:

Flash, 1GX8, PBGA67, VFBGA-67

Part Details for TH58BYG3S0HBAI6 by KIOXIA

Results Overview of TH58BYG3S0HBAI6 by KIOXIA

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Applications Industrial Automation

TH58BYG3S0HBAI6 Information

TH58BYG3S0HBAI6 by KIOXIA is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for TH58BYG3S0HBAI6

Part # Distributor Description Stock Price Buy
DISTI # TH58BYG3S0HBAI6-ND
DigiKey IC FLASH 8GBIT 67VFBGA Min Qty: 338 Lead time: 14 Weeks Container: Tray Temporarily Out of Stock
  • 338 $8.0356
$8.0356 Buy Now
DISTI # 757-TH58BYG3S0HBAI6
Mouser Electronics NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) RoHS: Compliant 127
  • 1 $9.1100
  • 10 $8.3900
  • 25 $8.2100
  • 338 $8.0300
$8.0300 / $9.1100 Buy Now

Part Details for TH58BYG3S0HBAI6

TH58BYG3S0HBAI6 CAD Models

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TH58BYG3S0HBAI6 Part Data Attributes

TH58BYG3S0HBAI6 KIOXIA
Buy Now Datasheet
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TH58BYG3S0HBAI6 KIOXIA Flash, 1GX8, PBGA67, VFBGA-67
Part Life Cycle Code Active
Ihs Manufacturer KIOXIA HOLDINGS CORP
Package Description VFBGA-67
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.51
Samacsys Manufacturer KIOXIA Corporation
Access Time-Max 25 ns
JESD-30 Code R-PBGA-B67
Length 8 mm
Memory Density 8589934592 bit
Memory IC Type FLASH
Memory Width 8
Number of Functions 1
Number of Terminals 67
Number of Words 1073741824 words
Number of Words Code 1000000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 1GX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA67,8X10,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial SERIAL
Programming Voltage 1.8 V
Seated Height-Max 1 mm
Standby Current-Max 0.0001 A
Supply Current-Max 0.03 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Type NAND TYPE
Width 6.5 mm
Write Cycle Time-Max (tWC) 0.000025 ms
Write Protection HARDWARE

TH58BYG3S0HBAI6 Related Parts

TH58BYG3S0HBAI6 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the TH58BYG3S0HBAI6 is 0°C to 70°C (32°F to 158°F), with a non-operating temperature range of -40°C to 85°C (-40°F to 185°F).

  • The TH58BYG3S0HBAI6 has a power loss protection feature that ensures data integrity in the event of a sudden power loss during write operations. It uses a combination of capacitors and firmware-based protection mechanisms to complete any in-progress writes and prevent data corruption.

  • The typical latency for read operations is around 500-600 microseconds, while the typical latency for write operations is around 1-2 milliseconds. However, these values may vary depending on the specific use case and workload.

  • The TH58BYG3S0HBAI6 uses a combination of dynamic wear leveling and static wear leveling to ensure that write operations are evenly distributed across the entire NAND flash memory. It also employs a garbage collection mechanism to reclaim invalid or deleted data blocks and maintain optimal performance.

  • Yes, the TH58BYG3S0HBAI6 is compatible with a wide range of operating systems, including Windows, Linux, and macOS. It supports various file systems, including NTFS, HFS+, and ext4.

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