Part Details for TH58BYG3S0HBAI6 by KIOXIA
Results Overview of TH58BYG3S0HBAI6 by KIOXIA
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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TH58BYG3S0HBAI6 Information
TH58BYG3S0HBAI6 by KIOXIA is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for TH58BYG3S0HBAI6
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TH58BYG3S0HBAI6-ND
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DigiKey | IC FLASH 8GBIT 67VFBGA Min Qty: 338 Lead time: 14 Weeks Container: Tray | Temporarily Out of Stock |
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$8.0356 | Buy Now |
DISTI #
757-TH58BYG3S0HBAI6
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Mouser Electronics | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) RoHS: Compliant | 127 |
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$8.0300 / $9.1100 | Buy Now |
Part Details for TH58BYG3S0HBAI6
TH58BYG3S0HBAI6 CAD Models
TH58BYG3S0HBAI6 Part Data Attributes
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TH58BYG3S0HBAI6
KIOXIA
Buy Now
Datasheet
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Compare Parts:
TH58BYG3S0HBAI6
KIOXIA
Flash, 1GX8, PBGA67, VFBGA-67
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Part Life Cycle Code | Active | |
Ihs Manufacturer | KIOXIA HOLDINGS CORP | |
Package Description | VFBGA-67 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Samacsys Manufacturer | KIOXIA Corporation | |
Access Time-Max | 25 ns | |
JESD-30 Code | R-PBGA-B67 | |
Length | 8 mm | |
Memory Density | 8589934592 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 67 | |
Number of Words | 1073741824 words | |
Number of Words Code | 1000000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1GX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | VFBGA | |
Package Equivalence Code | BGA67,8X10,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
Parallel/Serial | SERIAL | |
Programming Voltage | 1.8 V | |
Seated Height-Max | 1 mm | |
Standby Current-Max | 0.0001 A | |
Supply Current-Max | 0.03 mA | |
Supply Voltage-Max (Vsup) | 1.95 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Type | NAND TYPE | |
Width | 6.5 mm | |
Write Cycle Time-Max (tWC) | 0.000025 ms | |
Write Protection | HARDWARE |
TH58BYG3S0HBAI6 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the TH58BYG3S0HBAI6 is 0°C to 70°C (32°F to 158°F), with a non-operating temperature range of -40°C to 85°C (-40°F to 185°F).
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The TH58BYG3S0HBAI6 has a power loss protection feature that ensures data integrity in the event of a sudden power loss during write operations. It uses a combination of capacitors and firmware-based protection mechanisms to complete any in-progress writes and prevent data corruption.
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The typical latency for read operations is around 500-600 microseconds, while the typical latency for write operations is around 1-2 milliseconds. However, these values may vary depending on the specific use case and workload.
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The TH58BYG3S0HBAI6 uses a combination of dynamic wear leveling and static wear leveling to ensure that write operations are evenly distributed across the entire NAND flash memory. It also employs a garbage collection mechanism to reclaim invalid or deleted data blocks and maintain optimal performance.
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Yes, the TH58BYG3S0HBAI6 is compatible with a wide range of operating systems, including Windows, Linux, and macOS. It supports various file systems, including NTFS, HFS+, and ext4.