Part Details for TH58BVG2S3HBAI4 by Toshiba America Electronic Components
Results Overview of TH58BVG2S3HBAI4 by Toshiba America Electronic Components
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
TH58BVG2S3HBAI4 Information
TH58BVG2S3HBAI4 by Toshiba America Electronic Components is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for TH58BVG2S3HBAI4
TH58BVG2S3HBAI4 CAD Models
TH58BVG2S3HBAI4 Part Data Attributes
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TH58BVG2S3HBAI4
Toshiba America Electronic Components
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Datasheet
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TH58BVG2S3HBAI4
Toshiba America Electronic Components
Flash
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | BGA-63 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| JESD-30 Code | R-PBGA-B63 | |
| Length | 11 mm | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Terminals | 63 | |
| Number of Words | 536870912 words | |
| Number of Words Code | 512000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA63,10X12,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Parallel/Serial | SERIAL | |
| Programming Voltage | 3.3 V | |
| Seated Height-Max | 1 mm | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Type | SLC NAND TYPE | |
| Width | 9 mm | |
| Write Protection | HARDWARE |
TH58BVG2S3HBAI4 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the TH58BVG2S3HBAI4 is -40°C to 85°C, with a storage temperature range of -40°C to 125°C.
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The TH58BVG2S3HBAI4 has an internal power-on reset circuit that initializes the device after power-up. The device is ready to use after the power-on reset sequence is complete, which typically takes around 10ms.
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The TH58BVG2S3HBAI4 has a maximum of 3,000 erase cycles per block, with a minimum of 100,000 erase cycles guaranteed over the entire device.
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The TH58BVG2S3HBAI4 has built-in error correction code (ECC) and error detection mechanisms. In case of errors, the device will output an error flag, and the host system should retry the operation or take corrective action.
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The typical programming time for the TH58BVG2S3HBAI4 is around 2-3ms per 256-byte page, with a maximum programming time of 10ms per page.