Part Details for TC58NVG2S3EBAI5 by Toshiba America Electronic Components
Results Overview of TC58NVG2S3EBAI5 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
TC58NVG2S3EBAI5 Information
TC58NVG2S3EBAI5 by Toshiba America Electronic Components is an EEPROM.
EEPROMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for TC58NVG2S3EBAI5
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 16 |
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$17.8155 / $21.6675 | Buy Now |
Part Details for TC58NVG2S3EBAI5
TC58NVG2S3EBAI5 CAD Models
TC58NVG2S3EBAI5 Part Data Attributes
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TC58NVG2S3EBAI5
Toshiba America Electronic Components
Buy Now
Datasheet
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TC58NVG2S3EBAI5
Toshiba America Electronic Components
IC 512M X 8 EEPROM 3V, PBGA63, 10 X 13 MM, 0.80 MM PITCH, PLASTIC, TFBGA-63, Programmable ROM
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA63,10X12,32 | |
| Pin Count | 63 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991.B.1.B.1 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 25 ns | |
| Command User Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PBGA-B63 | |
| Length | 13 mm | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | EEPROM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 4K | |
| Number of Terminals | 63 | |
| Number of Words | 536870912 words | |
| Number of Words Code | 512000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA63,10X12,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Page Size | 2K words | |
| Parallel/Serial | SERIAL | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1 mm | |
| Sector Size | 128K | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.03 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Toggle Bit | NO | |
| Type | NAND TYPE | |
| Width | 10 mm |
TC58NVG2S3EBAI5 Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the TC58NVG2S3EBAI5 is 2.7V to 3.6V.
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The power-up sequence should be VCC first, then WE# and CE#; for power-down, the sequence should be CE# and WE# first, then VCC. This ensures proper device operation and prevents latch-up.
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The maximum data retention period for the TC58NVG2S3EBAI5 is 10 years at 25°C, and 5 years at 55°C.
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No, the TC58NVG2S3EBAI5 is not designed to operate at 5V. The maximum recommended operating voltage is 3.6V.
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The write endurance of the TC58NVG2S3EBAI5 is specified as 100,000 cycles. To determine the optimal write endurance for your application, consider factors such as the number of write cycles required, the frequency of writes, and the data retention period.