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TC58BYG2S0HBAI4 by:

IC FLASH 1.8V PROM, Programmable ROM

Part Details for TC58BYG2S0HBAI4 by Toshiba America Electronic Components

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TC58BYG2S0HBAI4 Information

TC58BYG2S0HBAI4 by Toshiba America Electronic Components is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for TC58BYG2S0HBAI4

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TC58BYG2S0HBAI4 Part Data Attributes

TC58BYG2S0HBAI4 Toshiba America Electronic Components
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TC58BYG2S0HBAI4 Toshiba America Electronic Components IC FLASH 1.8V PROM, Programmable ROM
Part Life Cycle Code Transferred
Ihs Manufacturer TOSHIBA CORP
Part Package Code BGA
Package Description TFBGA-63
Pin Count 63
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.51
Samacsys Manufacturer Toshiba
JESD-30 Code R-PBGA-B63
Length 11 mm
Memory Density 4294967296 bit
Memory IC Type FLASH
Memory Width 8
Number of Functions 1
Number of Terminals 63
Number of Words 536870912 words
Number of Words Code 512000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 512MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA63,10X12,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial SERIAL
Programming Voltage 1.8 V
Seated Height-Max 1 mm
Standby Current-Max 0.00005 A
Supply Current-Max 0.03 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Type NAND TYPE
Width 9 mm
Write Cycle Time-Max (tWC) 0.000025 ms
Write Protection HARDWARE

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