Part Details for TC58BVG0S3HTAI0 by Toshiba America Electronic Components
Results Overview of TC58BVG0S3HTAI0 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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TC58BVG0S3HTAI0 Information
TC58BVG0S3HTAI0 by Toshiba America Electronic Components is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for TC58BVG0S3HTAI0
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Memory ICs | 139 |
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RFQ |
Part Details for TC58BVG0S3HTAI0
TC58BVG0S3HTAI0 CAD Models
TC58BVG0S3HTAI0 Part Data Attributes
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TC58BVG0S3HTAI0
Toshiba America Electronic Components
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Datasheet
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TC58BVG0S3HTAI0
Toshiba America Electronic Components
1GB SLC BENAND TSOP 24NM LB (EEPROM) I-TEMP
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | TSOP1 | |
Package Description | TSOP1-48 | |
Pin Count | 48 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Samacsys Manufacturer | Toshiba | |
Access Time-Max | 25 ns | |
JESD-30 Code | R-PDSO-G48 | |
Length | 18.4 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 48 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 128MX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP1 | |
Package Equivalence Code | TSSOP48,.8,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Parallel/Serial | PARALLEL | |
Programming Voltage | 3.3 V | |
Seated Height-Max | 1.2 mm | |
Standby Current-Max | 0.00005 A | |
Supply Current-Max | 0.03 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Type | NAND TYPE | |
Width | 12 mm | |
Write Cycle Time-Max (tWC) | 2.5e-8 ms | |
Write Protection | HARDWARE |
TC58BVG0S3HTAI0 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the TC58BVG0S3HTAI0 is -40°C to 85°C.
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The power-up and power-down sequences for the TC58BVG0S3HTAI0 should be handled according to the datasheet, with a slow ramp-up and ramp-down of the power supply voltage to prevent damage to the device.
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The maximum allowable voltage for the TC58BVG0S3HTAI0 is 3.6V, and exceeding this voltage may cause damage to the device.
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To ensure data integrity and prevent data corruption during power-down or power-up sequences, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized and configured before accessing the memory.
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The recommended storage temperature range for the TC58BVG0S3HTAI0 is -40°C to 125°C.